Paper Abstract and Keywords |
Presentation |
2014-01-29 13:00
[Invited Talk]
Next-Generation Solid-State-Drive Design with Semiconductor Non-Volatile Memories Koh Johguchi (Chuo Univ.) ICD2013-135 Link to ES Tech. Rep. Archives: ICD2013-135 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Thanks to the recent fabrication technology development, the bit cost of NAND flash memories has been reduced. Thus, solid-state-drives (SSDs) replace hard-disk-drives (HDDs) as storage devices. This replacement trend is not exclusive to mobile devices but extended to data-center applications which require higher performance and reliability. In order to meet these requirements, it is essential to understand the device characteristics of the non-volatile memories and to develop the circuits and systems which fully utilize their advanced property. Therefore, this paper presents the current status and issues of the mainstream semiconductor storage device; NAND flash memory and also introduces the design examples of the next generation storage class memories; resistive RAM (ReRAM) and phase change memory (PCM). In addition, some message will be passed to young student researchers from author's experience. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Non-Volatile Memory / NAND Flash Memory / Resistive RAM / ReRAM / Phase Change Memory / PCM / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 419, ICD2013-135, pp. 83-83, Jan. 2014. |
Paper # |
ICD2013-135 |
Date of Issue |
2014-01-21 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ICD2013-135 Link to ES Tech. Rep. Archives: ICD2013-135 |
Conference Information |
Committee |
ICD |
Conference Date |
2014-01-28 - 2014-01-29 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyoto Univ. Tokeidai Kinenkan |
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(See Japanese page) |
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Paper Information |
Registration To |
ICD |
Conference Code |
2014-01-ICD |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Next-Generation Solid-State-Drive Design with Semiconductor Non-Volatile Memories |
Sub Title (in English) |
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Non-Volatile Memory |
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NAND Flash Memory |
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Resistive RAM |
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ReRAM |
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Phase Change Memory |
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PCM |
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Koh Johguchi |
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Chuo University (Chuo Univ.) |
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Speaker |
Author-1 |
Date Time |
2014-01-29 13:00:00 |
Presentation Time |
60 minutes |
Registration for |
ICD |
Paper # |
ICD2013-135 |
Volume (vol) |
vol.113 |
Number (no) |
no.419 |
Page |
p.83 |
#Pages |
1 |
Date of Issue |
2014-01-21 (ICD) |