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| Presentation | 2014-01-29 10:25 [Invited Talk] High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth Toshifumi Irisawa, Minoru Oda, Keiji Ikeda, Yoshihiko Moriyama, Eiko Mieda, Wipakorn. Jevasuwan, Tatsuro Maeda (AIST), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Yasuyuki Miyamoto (Tokyo Inst. of Tech.), Tsutomu Tezuka (AIST)  SDM2013-137 Link to ES Tech. Rep. Archives: SDM2013-137 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | riangular In0.53Ga0.47As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. The triangular shaped channels with bottom width down to 30 nm were formed by MOVPE growth on narrow InGaAs-OI fins. The formed (111)B surface provided higher mobility compared with reference InGaAs-OI tri-gate (1.9x) as well as bulk (100) InGaAs nMOSFETs (1.6x), which is possibly due to reduced Dit in conduction band and resultant suppressed carrier trapping at the MOS interface. Lower noise and hysteresis in triangular device supported this model. High Ion value of 930 A/m at Lch = 300 nm indicates the potential of the triangular InGaAs-OI nMOSFETs for ultra-low power and high performance CMOS applications. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InGaAs-OI / MOSFET / High mobility / Triangular channel / Multi-gate / (111)B surface / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 420, SDM2013-137, pp. 9-12, Jan. 2014. | |
| Paper # | SDM2013-137 | |
| Date of Issue | 2014-01-22 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2013-137 Link to ES Tech. Rep. Archives: SDM2013-137 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2014-01-29 - 2014-01-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2014-01-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth |
| Sub Title (in English) | |
| Keyword(1) | InGaAs-OI |
| Keyword(2) | MOSFET |
| Keyword(3) | High mobility |
| Keyword(4) | Triangular channel |
| Keyword(5) | Multi-gate |
| Keyword(6) | (111)B surface |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Toshifumi Irisawa |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 2nd Author's Name | Minoru Oda |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 3rd Author's Name | Keiji Ikeda |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 4th Author's Name | Yoshihiko Moriyama |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 5th Author's Name | Eiko Mieda |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 6th Author's Name | Wipakorn. Jevasuwan |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 7th Author's Name | Tatsuro Maeda |
| 7th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 8th Author's Name | Osamu Ichikawa |
| 8th Author's Affiliation | Sumitomo Chemical Company, Limited (Sumitomo Chemical) |
| 9th Author's Name | Takenori Osada |
| 9th Author's Affiliation | Sumitomo Chemical Company, Limited (Sumitomo Chemical) |
| 10th Author's Name | Masahiko Hata |
| 10th Author's Affiliation | Sumitomo Chemical Company, Limited (Sumitomo Chemical) |
| 11th Author's Name | Yasuyuki Miyamoto |
| 11th Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 12th Author's Name | Tsutomu Tezuka |
| 12th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
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| 15th Author's Affiliation | () |
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| 17th Author's Affiliation | () |
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| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2014-01-29 10:25:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2013-137 |
| Volume (vol) | vol.113 |
| Number (no) | no.420 |
| Page | pp.9-12 |
| #Pages | 4 |
| Date of Issue | 2014-01-22 (SDM) |
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