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| Presentation | 2014-01-24 14:18 Luminescence property of hexagonal boron nitride films grown by high-temperature CVD Naoki Umehara, Iori Kuwahara, Hye-Young Lee, Tetsuya Kouno, Hiroko Kominami, Yoichiro Nakanishi, Kazuhiko Hara (Shizuoka Univ.)  EID2013-14 Link to ES Tech. Rep. Archives: EID2013-14 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Hexagonal boron nitride (h-BN) thin films have been grown on a c-plane sapphire substrate by atmospheric-pressure chemical vapor deposition using BCl3 and NH3 as precursors. The growth temperature (Tg) was varied from 1300 to 1700 °C. Prior to growth, the substrate surface was nitrided in a NH3 flow at Tg. The XRD measurement has indicated that the crystallization is promoted with increasing Tg from 1300 C, resulting in the growth of the film strongly oriented towards c-axis at 1500 °C. However, the further increase of Tg deteriorated the crystalline quality, which suggests the excessive nitridation of the substrate surface. The cathodoluminescence property has a correlation with the crystalline quality. The pronounced emission band characteristic of h-BN was also observed from the film grown at 1500 °C. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | hexagonal boron nitride / CVD / thin film / cathodoluminescence / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 408, EID2013-14, pp. 25-28, Jan. 2014. | |
| Paper # | EID2013-14 | |
| Date of Issue | 2014-01-17 (EID) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EID2013-14 Link to ES Tech. Rep. Archives: EID2013-14 |
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| Conference Information | |
| Committee | EID ITE-IDY IEIJ-SSL IEE-EDD SID-JC |
| Conference Date | 2014-01-24 - 2014-01-25 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niigata University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | EID |
| Conference Code | 2014-01-EID-IDY-SSL-EDD-JC |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Luminescence property of hexagonal boron nitride films grown by high-temperature CVD |
| Sub Title (in English) | |
| Keyword(1) | hexagonal boron nitride |
| Keyword(2) | CVD |
| Keyword(3) | thin film |
| Keyword(4) | cathodoluminescence |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Naoki Umehara |
| 1st Author's Affiliation | Shizuoka University (Shizuoka Univ.) |
| 2nd Author's Name | Iori Kuwahara |
| 2nd Author's Affiliation | Shizuoka University (Shizuoka Univ.) |
| 3rd Author's Name | Hye-Young Lee |
| 3rd Author's Affiliation | Shizuoka University (Shizuoka Univ.) |
| 4th Author's Name | Tetsuya Kouno |
| 4th Author's Affiliation | Shizuoka University (Shizuoka Univ.) |
| 5th Author's Name | Hiroko Kominami |
| 5th Author's Affiliation | Shizuoka University (Shizuoka Univ.) |
| 6th Author's Name | Yoichiro Nakanishi |
| 6th Author's Affiliation | Shizuoka University (Shizuoka Univ.) |
| 7th Author's Name | Kazuhiko Hara |
| 7th Author's Affiliation | Shizuoka University (Shizuoka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2014-01-24 14:18:00 |
| Presentation Time | 8 minutes |
| Registration for | EID |
| Paper # | EID2013-14 |
| Volume (vol) | vol.113 |
| Number (no) | no.408 |
| Page | pp.25-28 |
| #Pages | 4 |
| Date of Issue | 2014-01-17 (EID) |
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