Paper Abstract and Keywords |
Presentation |
2014-01-24 09:00
Electromagnetic Simulation of High Resistance Silicon Substrate by Helium ion Irradiation Yuki Yao, Takuichi Hirano, Ning Li, Kenichi Okada, Akira Matsuzawa, Jiro Hirokawa, Makoto Ando (Tokyo Inst. of Tech.), Takeshi Inoue, Akinori Masaoka, Hitoshi Sakane (SEI) PN2013-61 OPE2013-175 LQE2013-161 EST2013-110 MWP2013-81 Link to ES Tech. Rep. Archives: OPE2013-175 LQE2013-161 EST2013-110 MWP2013-81 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A helium(He)-3 ion bombardment technique has been proposed for creating locally high resistivity silicon substrate areas. High resistivity silicon (Si) substrate is implemented by lattice defects caused by ion irradiation. In this paper, electromagnetic simulation of high resistance silicon substrate by He-ion irradiation is performed by assuming the cavity is formed periodically. Effective relative permittivity and effective resistivity of the Si substrate are evaluated by the propagation constant using eigenmode analysis of a unit-cell. Reduction of conductivity is observed when the volume of the cavity in the unit-cell becomes larger. It was found by the simulation that the cavity must have 87.7% of the volume for high resistivity of 1 kΩ・cm. From experimental result, the number of ions is 12.5 times larger than that of carriers in Si substrate. This means that the simulation with Maxwell equations with macroscopic electric constants is not sufficient. The simulation taking microscopic phenomena into account is a future work. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Helium ion irradiation / High resistivity / Silicon substrate / Material property / Eigenmode analysis / Electromagnetic simulation / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 396, EST2013-110, pp. 181-185, Jan. 2014. |
Paper # |
EST2013-110 |
Date of Issue |
2014-01-16 (PN, OPE, LQE, EST, MWP) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
PN2013-61 OPE2013-175 LQE2013-161 EST2013-110 MWP2013-81 Link to ES Tech. Rep. Archives: OPE2013-175 LQE2013-161 EST2013-110 MWP2013-81 |
Conference Information |
Committee |
MWP EMT PN LQE OPE EST IEE-EMT |
Conference Date |
2014-01-23 - 2014-01-24 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Doshisha University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
EST |
Conference Code |
2014-01-MWP-EMT-PN-LQE-OPE-EST-EMT |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Electromagnetic Simulation of High Resistance Silicon Substrate by Helium ion Irradiation |
Sub Title (in English) |
|
Keyword(1) |
Helium ion irradiation |
Keyword(2) |
High resistivity |
Keyword(3) |
Silicon substrate |
Keyword(4) |
Material property |
Keyword(5) |
Eigenmode analysis |
Keyword(6) |
Electromagnetic simulation |
Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Yuki Yao |
1st Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
2nd Author's Name |
Takuichi Hirano |
2nd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
3rd Author's Name |
Ning Li |
3rd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
4th Author's Name |
Kenichi Okada |
4th Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
5th Author's Name |
Akira Matsuzawa |
5th Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
6th Author's Name |
Jiro Hirokawa |
6th Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
7th Author's Name |
Makoto Ando |
7th Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
8th Author's Name |
Takeshi Inoue |
8th Author's Affiliation |
S.H.I. Examination & Inspection, Ltd. (SEI) |
9th Author's Name |
Akinori Masaoka |
9th Author's Affiliation |
S.H.I. Examination & Inspection, Ltd. (SEI) |
10th Author's Name |
Hitoshi Sakane |
10th Author's Affiliation |
S.H.I. Examination & Inspection, Ltd. (SEI) |
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Speaker |
Author-1 |
Date Time |
2014-01-24 09:00:00 |
Presentation Time |
25 minutes |
Registration for |
EST |
Paper # |
PN2013-61, OPE2013-175, LQE2013-161, EST2013-110, MWP2013-81 |
Volume (vol) |
vol.113 |
Number (no) |
no.393(PN), no.394(OPE), no.395(LQE), no.396(EST), no.397(MWP) |
Page |
pp.181-185 |
#Pages |
5 |
Date of Issue |
2014-01-16 (PN, OPE, LQE, EST, MWP) |
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