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Paper Abstract and Keywords
Presentation 2014-01-23 16:50
Wide operating wavelength range of 30 nm with 25.8-Gb/s push-pull-driven InGaAlAs DMLs on semi-insulating InP substrate
Wataru Kobayashi, Takeshi Fujisawa, Ken Tsuzuki, Yoshitaka Ohiso, Shigeru Kanazawa, Takahiko Shindo, Takayuki Yamanaka, Hiroaki Sanjoh (NTT) PN2013-58 OPE2013-172 LQE2013-158 EST2013-107 MWP2013-78 Link to ES Tech. Rep. Archives: OPE2013-172 LQE2013-158 EST2013-107 MWP2013-78
Abstract (in Japanese) (See Japanese page) 
(in English) We design and fabricate directly modulated lasers (DMLs) with a wide wavelength range on one InP wafer to realize a large-capacity monolithically integrated light source array at a data rate of over 100 Gb/s. To realize push-pull operation, the DMLs are fabricated on a semi-insulating (SI) InP substrate. We also employ InGaAlAs to form a multiple quantum well (MQW) structure and set the cavity length at 200 um to increase the differential gain and frequency of the relaxation oscillations. To extend the operating wavelength range, we focus the wavelength detuning and design it to be 5 nm under operating conditions. We achieve a 3-dB-down frequency bandwidth of over 20 GHz and obtain clear eye openings at 25.8-Gb/s and error free operation with a push-pull driving configuration for a 30-nm operating wavelength range.
Keyword (in Japanese) (See Japanese page) 
(in English) Directly modulated laser / InGaAlAs / push-pull driving / 25.8 Gb/s / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 395, LQE2013-158, pp. 129-134, Jan. 2014.
Paper # LQE2013-158 
Date of Issue 2014-01-16 (PN, OPE, LQE, EST, MWP) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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技術研究報告に掲載された論文の著作権はIEICEに帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF PN2013-58 OPE2013-172 LQE2013-158 EST2013-107 MWP2013-78 Link to ES Tech. Rep. Archives: OPE2013-172 LQE2013-158 EST2013-107 MWP2013-78

Conference Information
Committee MWP EMT PN LQE OPE EST IEE-EMT  
Conference Date 2014-01-23 - 2014-01-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Doshisha University 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2014-01-MWP-EMT-PN-LQE-OPE-EST-EMT 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Wide operating wavelength range of 30 nm with 25.8-Gb/s push-pull-driven InGaAlAs DMLs on semi-insulating InP substrate 
Sub Title (in English)  
Keyword(1) Directly modulated laser  
Keyword(2) InGaAlAs  
Keyword(3) push-pull driving  
Keyword(4) 25.8 Gb/s  
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1st Author's Name Wataru Kobayashi  
1st Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
2nd Author's Name Takeshi Fujisawa  
2nd Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
3rd Author's Name Ken Tsuzuki  
3rd Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
4th Author's Name Yoshitaka Ohiso  
4th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
5th Author's Name Shigeru Kanazawa  
5th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
6th Author's Name Takahiko Shindo  
6th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
7th Author's Name Takayuki Yamanaka  
7th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
8th Author's Name Hiroaki Sanjoh  
8th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
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Speaker
Date Time 2014-01-23 16:50:00 
Presentation Time 25 
Registration for LQE 
Paper # IEICE-PN2013-58,IEICE-OPE2013-172,IEICE-LQE2013-158,IEICE-EST2013-107,IEICE-MWP2013-78 
Volume (vol) IEICE-113 
Number (no) no.393(PN), no.394(OPE), no.395(LQE), no.396(EST), no.397(MWP) 
Page pp.129-134 
#Pages IEICE-6 
Date of Issue IEICE-PN-2014-01-16,IEICE-OPE-2014-01-16,IEICE-LQE-2014-01-16,IEICE-EST-2014-01-16,IEICE-MWP-2014-01-16 


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