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Paper Abstract and Keywords
Presentation 2014-01-16 12:10
Correlation of On-Wafer 400V Dynamic Behavior and Trap Characteristics of GaN-HEMTs
Tadahiro Imada, Toshihide Kikkawa (Fujitsu Labs), Daniel Piedra, Tomas Palacios (Massachusetts Inst. of Tech.) ED2013-117 MW2013-182 Link to ES Tech. Rep. Archives: ED2013-117 MW2013-182
Abstract (in Japanese) (See Japanese page) 
(in English) A method for identifying the critical traps regarding to the dynamic behavior of gallium nitride high electron mobility transistors (GaN-HEMTs) is described. This method provides information on where the critical traps are located in the horizontal direction. At first, conductance-time characteristics of a GaN-HEMT are measured after high-voltage off-stress. Activation energy is calculated from the time constants extracted from the results. Next, trap characterization is achieved using the capacitance and series conductance transients of a comb-style Schottky barrier diode on the same epi-wafer as the HEMT after inverse electrical stress and activation energy is extracted also in the same way. Bias dependence of depletion area edge is used in order to detect where trap phenomena happen horizontally. We evaluated devices without passivation with this scheme. Off-stress of the HEMT was 400 V and inverse electrical stress of Schottky barrier diode was -5 V. The 0.18 eV trap phenomenon on the edge of the gate on the drain electrode side was the dominant cause of the dynamic behavior of the HEMT. With these results, this method gives us the important information for improving device processes.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN-HEMT / Dynamic-on-resistance / Electron trap / / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 378, ED2013-117, pp. 41-45, Jan. 2014.
Paper # ED2013-117 
Date of Issue 2014-01-09 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2013-117 MW2013-182 Link to ES Tech. Rep. Archives: ED2013-117 MW2013-182

Conference Information
Committee ED MW  
Conference Date 2014-01-16 - 2014-01-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Power devices, High-speed and high-frequency devices, Microwave Technologies, etc. 
Paper Information
Registration To ED 
Conference Code 2014-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Correlation of On-Wafer 400V Dynamic Behavior and Trap Characteristics of GaN-HEMTs 
Sub Title (in English)  
Keyword(1) GaN-HEMT  
Keyword(2) Dynamic-on-resistance  
Keyword(3) Electron trap  
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1st Author's Name Tadahiro Imada  
1st Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs)
2nd Author's Name Toshihide Kikkawa  
2nd Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs)
3rd Author's Name Daniel Piedra  
3rd Author's Affiliation Massachusetts Institute of Technology (Massachusetts Inst. of Tech.)
4th Author's Name Tomas Palacios  
4th Author's Affiliation Massachusetts Institute of Technology (Massachusetts Inst. of Tech.)
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Speaker Author-1 
Date Time 2014-01-16 12:10:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2013-117, MW2013-182 
Volume (vol) vol.113 
Number (no) no.378(ED), no.379(MW) 
Page pp.41-45 
#Pages
Date of Issue 2014-01-09 (ED, MW) 


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