Paper Abstract and Keywords |
Presentation |
2014-01-16 12:10
Correlation of On-Wafer 400V Dynamic Behavior and Trap Characteristics of GaN-HEMTs Tadahiro Imada, Toshihide Kikkawa (Fujitsu Labs), Daniel Piedra, Tomas Palacios (Massachusetts Inst. of Tech.) ED2013-117 MW2013-182 Link to ES Tech. Rep. Archives: ED2013-117 MW2013-182 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A method for identifying the critical traps regarding to the dynamic behavior of gallium nitride high electron mobility transistors (GaN-HEMTs) is described. This method provides information on where the critical traps are located in the horizontal direction. At first, conductance-time characteristics of a GaN-HEMT are measured after high-voltage off-stress. Activation energy is calculated from the time constants extracted from the results. Next, trap characterization is achieved using the capacitance and series conductance transients of a comb-style Schottky barrier diode on the same epi-wafer as the HEMT after inverse electrical stress and activation energy is extracted also in the same way. Bias dependence of depletion area edge is used in order to detect where trap phenomena happen horizontally. We evaluated devices without passivation with this scheme. Off-stress of the HEMT was 400 V and inverse electrical stress of Schottky barrier diode was -5 V. The 0.18 eV trap phenomenon on the edge of the gate on the drain electrode side was the dominant cause of the dynamic behavior of the HEMT. With these results, this method gives us the important information for improving device processes. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN-HEMT / Dynamic-on-resistance / Electron trap / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 378, ED2013-117, pp. 41-45, Jan. 2014. |
Paper # |
ED2013-117 |
Date of Issue |
2014-01-09 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2013-117 MW2013-182 Link to ES Tech. Rep. Archives: ED2013-117 MW2013-182 |
Conference Information |
Committee |
ED MW |
Conference Date |
2014-01-16 - 2014-01-17 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Power devices, High-speed and high-frequency devices, Microwave Technologies, etc. |
Paper Information |
Registration To |
ED |
Conference Code |
2014-01-ED-MW |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Correlation of On-Wafer 400V Dynamic Behavior and Trap Characteristics of GaN-HEMTs |
Sub Title (in English) |
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Keyword(1) |
GaN-HEMT |
Keyword(2) |
Dynamic-on-resistance |
Keyword(3) |
Electron trap |
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1st Author's Name |
Tadahiro Imada |
1st Author's Affiliation |
Fujitsu Laboratories Ltd. (Fujitsu Labs) |
2nd Author's Name |
Toshihide Kikkawa |
2nd Author's Affiliation |
Fujitsu Laboratories Ltd. (Fujitsu Labs) |
3rd Author's Name |
Daniel Piedra |
3rd Author's Affiliation |
Massachusetts Institute of Technology (Massachusetts Inst. of Tech.) |
4th Author's Name |
Tomas Palacios |
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Massachusetts Institute of Technology (Massachusetts Inst. of Tech.) |
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Speaker |
Author-1 |
Date Time |
2014-01-16 12:10:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2013-117, MW2013-182 |
Volume (vol) |
vol.113 |
Number (no) |
no.378(ED), no.379(MW) |
Page |
pp.41-45 |
#Pages |
5 |
Date of Issue |
2014-01-09 (ED, MW) |
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