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| Presentation | 2014-01-16 11:20 InGaAs tri-gate MOSFETs with MOVPE regrown source/drain Toru Kanazawa, Yuichi Mishima, Haruki Kinoshita, Eiji Uehara, Yasuyuki Miyamoto (Tokyo Inst. of Tech.)  ED2013-115 MW2013-180 Link to ES Tech. Rep. Archives: ED2013-115 MW2013-180 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performance of that, we propose a novel device structure contains superior current controllability due to tri-gate structure and high current drivability due to n+-InGaAs source surrounding the non-planar channel. In this report, we demonstrate the source regrowth process for non-planar channel structure and current characteristics of the device fabricated by using regrowth. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | MOSFET / InGaAs / high mobility channel / multigate device / MOVPE / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 378, ED2013-115, pp. 29-33, Jan. 2014. | |
| Paper # | ED2013-115 | |
| Date of Issue | 2014-01-09 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2013-115 MW2013-180 Link to ES Tech. Rep. Archives: ED2013-115 MW2013-180 |
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| Conference Information | |
| Committee | ED MW |
| Conference Date | 2014-01-16 - 2014-01-17 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Power devices, High-speed and high-frequency devices, Microwave Technologies, etc. |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2014-01-ED-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | InGaAs tri-gate MOSFETs with MOVPE regrown source/drain |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | InGaAs |
| Keyword(3) | high mobility channel |
| Keyword(4) | multigate device |
| Keyword(5) | MOVPE |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Toru Kanazawa |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 2nd Author's Name | Yuichi Mishima |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 3rd Author's Name | Haruki Kinoshita |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 4th Author's Name | Eiji Uehara |
| 4th Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 5th Author's Name | Yasuyuki Miyamoto |
| 5th Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2014-01-16 11:20:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2013-115, MW2013-180 |
| Volume (vol) | vol.113 |
| Number (no) | no.378(ED), no.379(MW) |
| Page | pp.29-33 |
| #Pages | 5 |
| Date of Issue | 2014-01-09 (ED, MW) |
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