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Paper Abstract and Keywords
Presentation 2013-12-20 14:00
Characteristics and analysis of germanium waveguide photodiode under high voltage driving
Kotaro Takeda, Tatsuro Hiraki, Tai Tsuchizawa, Hidetaka Nishi, Rai Kou, Hiroshi Fukuda, Tsuyoshi Yamamoto (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo), Koji Yamada (NTT) OPE2013-140 Link to ES Tech. Rep. Archives: OPE2013-140
Abstract (in Japanese) (See Japanese page) 
(in English) We demonstrate a responsivity of germanium photodiode (GePD) with a silicon waveguide in the C- and L-band under high-voltage reverse bias driving. At a bias of 15 V, the germanium photodiode exhibits responsivity of over 1.14 A/W in the entire C- and L-bands. The high responsivity in the L-band is due to Franz-Keldysh (F-K) effect and avalanche effect. We proved that the high responsivity under high bias driving is due to both effects by numerical calculation. For accurate calculation, a change in thickness of depression layer in germanium mesa with bias voltage was considered. Calculation results considering the contributions of both effects show good agreement with measurement results. Considering contributions of both effects to minimum detection limit, optimization for dark current and electric field applied to Ge is discussed.
Keyword (in Japanese) (See Japanese page) 
(in English) Germanium photodiode / Franz-Keldysh effect / Avalanche effect / / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 370, OPE2013-140, pp. 13-18, Dec. 2013.
Paper # OPE2013-140 
Date of Issue 2013-12-13 (OPE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OPE2013-140 Link to ES Tech. Rep. Archives: OPE2013-140

Conference Information
Committee OPE  
Conference Date 2013-12-20 - 2013-12-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To OPE 
Conference Code 2013-12-OPE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characteristics and analysis of germanium waveguide photodiode under high voltage driving 
Sub Title (in English)  
Keyword(1) Germanium photodiode  
Keyword(2) Franz-Keldysh effect  
Keyword(3) Avalanche effect  
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1st Author's Name Kotaro Takeda  
1st Author's Affiliation Nippon Telegragh and Telephone Corporation (NTT)
2nd Author's Name Tatsuro Hiraki  
2nd Author's Affiliation Nippon Telegragh and Telephone Corporation (NTT)
3rd Author's Name Tai Tsuchizawa  
3rd Author's Affiliation Nippon Telegragh and Telephone Corporation (NTT)
4th Author's Name Hidetaka Nishi  
4th Author's Affiliation Nippon Telegragh and Telephone Corporation (NTT)
5th Author's Name Rai Kou  
5th Author's Affiliation Nippon Telegragh and Telephone Corporation (NTT)
6th Author's Name Hiroshi Fukuda  
6th Author's Affiliation Nippon Telegragh and Telephone Corporation (NTT)
7th Author's Name Tsuyoshi Yamamoto  
7th Author's Affiliation Nippon Telegragh and Telephone Corporation (NTT)
8th Author's Name Yasuhiko Ishikawa  
8th Author's Affiliation University of Tokyo (Univ. of Tokyo)
9th Author's Name Kazumi Wada  
9th Author's Affiliation University of Tokyo (Univ. of Tokyo)
10th Author's Name Koji Yamada  
10th Author's Affiliation Nippon Telegragh and Telephone Corporation (NTT)
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Speaker
Date Time 2013-12-20 14:00:00 
Presentation Time 25 
Registration for OPE 
Paper # IEICE-OPE2013-140 
Volume (vol) IEICE-113 
Number (no) no.370 
Page pp.13-18 
#Pages IEICE-6 
Date of Issue IEICE-OPE-2013-12-13 


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