Paper Abstract and Keywords |
Presentation |
2013-12-20 14:00
Characteristics and analysis of germanium waveguide photodiode under high voltage driving Kotaro Takeda, Tatsuro Hiraki, Tai Tsuchizawa, Hidetaka Nishi, Rai Kou, Hiroshi Fukuda, Tsuyoshi Yamamoto (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo), Koji Yamada (NTT) OPE2013-140 Link to ES Tech. Rep. Archives: OPE2013-140 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We demonstrate a responsivity of germanium photodiode (GePD) with a silicon waveguide in the C- and L-band under high-voltage reverse bias driving. At a bias of 15 V, the germanium photodiode exhibits responsivity of over 1.14 A/W in the entire C- and L-bands. The high responsivity in the L-band is due to Franz-Keldysh (F-K) effect and avalanche effect. We proved that the high responsivity under high bias driving is due to both effects by numerical calculation. For accurate calculation, a change in thickness of depression layer in germanium mesa with bias voltage was considered. Calculation results considering the contributions of both effects show good agreement with measurement results. Considering contributions of both effects to minimum detection limit, optimization for dark current and electric field applied to Ge is discussed. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Germanium photodiode / Franz-Keldysh effect / Avalanche effect / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 370, OPE2013-140, pp. 13-18, Dec. 2013. |
Paper # |
OPE2013-140 |
Date of Issue |
2013-12-13 (OPE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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OPE2013-140 Link to ES Tech. Rep. Archives: OPE2013-140 |