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| Presentation | 2013-12-16 13:55 Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Buried Gate Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT)  ED2013-92 Link to ES Tech. Rep. Archives: ED2013-92 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | To achieve higher frequency operations of InP-based high electron mobility transistors (HEMTs), the buried gate structures are used. In this work, we carried out Monte Carlo (MC) simulation of In0.52Al0.48As/In0.53Ga0.47As HEMTs with buried gate. We employed a T-shaped structure as a gate electrode. The maximum transconductance gm_max and gate capacitance Cg increase with increasing the buried depth d. The extent of increase in the gm_max is more than that in the Cg. As a result, the cutoff frequency fT increases with the buried depth d. These phenomena agree with our previous experimental results. We also carried out MC simulation of the rectangular gate HEMTs. The increase of the gm_max with increasing d is almost same as that of the Cg. The increase of fT with increasing d was not observed in the MC simulations of the rectangular gate HEMT. Therefore, the head of the T-shaped gate plays a very important role in determining the trend of fT. Furthermore, we obtained electron velocity in the channel layer. The average electron velocity in the channel under the gate electrode increases with increasing d. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | HEMT / InGaAs / Monte Carlo simulation / Drain-source current / Transconductance / Gate capacitance / Cutoff frequency / Electron velocity | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 357, ED2013-92, pp. 13-17, Dec. 2013. | |
| Paper # | ED2013-92 | |
| Date of Issue | 2013-12-09 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2013-92 Link to ES Tech. Rep. Archives: ED2013-92 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2013-12-16 - 2013-12-17 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Research Institute of Electrical Communication Tohoku University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter wave, terahertz wave devices and systems |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2013-12-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Buried Gate |
| Sub Title (in English) | |
| Keyword(1) | HEMT |
| Keyword(2) | InGaAs |
| Keyword(3) | Monte Carlo simulation |
| Keyword(4) | Drain-source current |
| Keyword(5) | Transconductance |
| Keyword(6) | Gate capacitance |
| Keyword(7) | Cutoff frequency |
| Keyword(8) | Electron velocity |
| 1st Author's Name | Akira Endoh |
| 1st Author's Affiliation | National Institute of Information and Communications Technology/Fujitsu Laboratories Ltd. (NICT/Fujitsu Labs.) |
| 2nd Author's Name | Issei Watanabe |
| 2nd Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 3rd Author's Name | Akifumi Kasamatsu |
| 3rd Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 4th Author's Name | Takashi Mimura |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd./National Institute of Information and Communications Technology (Fujitsu Labs./NICT) |
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| Speaker | Author-1 |
| Date Time | 2013-12-16 13:55:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2013-92 |
| Volume (vol) | vol.113 |
| Number (no) | no.357 |
| Page | pp.13-17 |
| #Pages | 5 |
| Date of Issue | 2013-12-09 (ED) |
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