Paper Abstract and Keywords |
Presentation |
2013-12-16 14:20
An F-band Fundamental Mixer Using InP HEMTs for Precise Spectrum Analysis Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara (Fujitsu) ED2013-93 Link to ES Tech. Rep. Archives: ED2013-93 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A broadband, single fundamental mixer is developed by using InP HEMT technology for use in precise spectrum analysis at frequencies above 110 GHz. The mixer has a duplexer at the drain terminal separating LO/RF signals from an IF signal and functions in both resistive and drain-LO-injection modes. In the drain-LO-injection mode, a conversion loss of 3 dB is measured on-chip. The drain-LO-injection mixer exhibits an IF bandwidth of more than 20 GHz on a wafer at an RF frequency of 116 GHz with an LO signal of 110 GHz and LO power of only 3 dBm. On the other hand, a conversion loss of 6.5 dB and an IF bandwidth of more than 30 GHz are measured on-chip in the resistive mode. The mixer chip is mounted in a module package, and we report on design and characterization of the mixer and module package. Our mixer module shows low conversion loss, wide bandwidth, and low LO power performance, thereby it is one of the best candidate for precise spectrum measurement or wireless communication systems. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
millimeter-wave / InP HEMT / fundamental mixer / resistive mixer / drain-LO-injection mixer / waveguide to microstrip transition / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 357, ED2013-93, pp. 19-23, Dec. 2013. |
Paper # |
ED2013-93 |
Date of Issue |
2013-12-09 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2013-93 Link to ES Tech. Rep. Archives: ED2013-93 |
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