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Paper Abstract and Keywords
Presentation 2013-12-13 14:10
[Invited Talk] Proposal of "Pore Engineering" as the Method for Controlling Resistive Switching Properties in Resistive Random Access Memory (ReRAM)
Kentaro Kinoshita (Tottori Univ./TEDREC), Sho Hasegawa (Tottori Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) We found that both switching voltages and switching current of Cu/HfO2/Pt-structured conducting-bridge random access memory (CB-RAM) were reduced by providing water to the HfO2 layer. This suggests that water that is condensed in nano-pores between HfO2 columnar crystals due to capillary condensation enhances resistive switching by the enhancement of electrochemical reaction of Cu ions. Therefore, it was suggested that we have to change our conventional way for the development of CB-RAM, which focused mainly on the quality of materials and the crystallinity on the basis of the knowledge on electronic materials, to new way. The new way is focused on (1) the shape and size of pores, (2) physical and chemical properties of the pore surface, and (3) kinds of solvents. In this paper, we propose a ‘pores engineering’ as the control method of resistive switching properties based on (1)-(3). Switching voltages were confirmed to be decreased with increasing the solubility of Cu ions by solvent substitution measurements, showing the effectiveness of the proposed method.
Keyword (in Japanese) (See Japanese page) 
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Reference Info. IEICE Tech. Rep.
Paper #  
Date of Issue  
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Conference Information
Committee SDM  
Conference Date 2013-12-13 - 2013-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si related materials 
Paper Information
Registration To SDM 
Conference Code 2013-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Proposal of "Pore Engineering" as the Method for Controlling Resistive Switching Properties in Resistive Random Access Memory (ReRAM) 
Sub Title (in English)  
1st Author's Name Kentaro Kinoshita  
1st Author's Affiliation Tottori University/Tottori University Electronic Display Research Center (Tottori Univ./TEDREC)
2nd Author's Name Sho Hasegawa  
2nd Author's Affiliation Tottori University (Tottori Univ.)
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Date Time 2013-12-13 14:10:00 
Presentation Time 30 
Registration for SDM 
Paper #  
Volume (vol) IEICE-113 
Number (no) no.351 
#Pages IEICE- 
Date of Issue  

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