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Paper Abstract and Keywords
Presentation 2013-12-13 17:20
Characterization of interface states in SiC MOS structures with various crystal faces by conductance method
Seiya Nakazawa, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-133 Link to ES Tech. Rep. Archives: SDM2013-133
Abstract (in Japanese) (See Japanese page) 
(in English) The author's group previously reported that there are two types of interface states (fast and slow state) in 4H-SiC (0001) MOS structures. In this study, we have fabricated SiC MOS capacitors with various crystal faces and investigated interface states by high - low method, C-ψ_s method and conductance method. We have found that there are two types of interface states in 4H-SiC MOS interface, regardless of crystal faces and the density of interface states which have smaller time constants depends on crystal faces. Furthermore, we have compared capture cross sections of interface states which have larger time constants. The capture cross section exhibited very little dependence on crystal faces , which indicates that the origin of these interface states may be the same.
Keyword (in Japanese) (See Japanese page) 
(in English) SiC / MOS / Interface State / Conductance method / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 351, SDM2013-133, pp. 101-105, Dec. 2013.
Paper # SDM2013-133 
Date of Issue 2013-12-06 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2013-133 Link to ES Tech. Rep. Archives: SDM2013-133

Conference Information
Committee SDM  
Conference Date 2013-12-13 - 2013-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si related materials 
Paper Information
Registration To SDM 
Conference Code 2013-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of interface states in SiC MOS structures with various crystal faces by conductance method 
Sub Title (in English)  
Keyword(1) SiC  
Keyword(2) MOS  
Keyword(3) Interface State  
Keyword(4) Conductance method  
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1st Author's Name Seiya Nakazawa  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Yuichiro Nanen  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Jun Suda  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Tsunenobu Kimoto  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2013-12-13 17:20:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2013-133 
Volume (vol) vol.113 
Number (no) no.351 
Page pp.101-105 
#Pages
Date of Issue 2013-12-06 (SDM) 


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