Paper Abstract and Keywords |
Presentation |
2013-12-13 17:20
Characterization of interface states in SiC MOS structures with various crystal faces by conductance method Seiya Nakazawa, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-133 Link to ES Tech. Rep. Archives: SDM2013-133 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The author's group previously reported that there are two types of interface states (fast and slow state) in 4H-SiC (0001) MOS structures. In this study, we have fabricated SiC MOS capacitors with various crystal faces and investigated interface states by high - low method, C-ψ_s method and conductance method. We have found that there are two types of interface states in 4H-SiC MOS interface, regardless of crystal faces and the density of interface states which have smaller time constants depends on crystal faces. Furthermore, we have compared capture cross sections of interface states which have larger time constants. The capture cross section exhibited very little dependence on crystal faces , which indicates that the origin of these interface states may be the same. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SiC / MOS / Interface State / Conductance method / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 351, SDM2013-133, pp. 101-105, Dec. 2013. |
Paper # |
SDM2013-133 |
Date of Issue |
2013-12-06 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2013-133 Link to ES Tech. Rep. Archives: SDM2013-133 |
Conference Information |
Committee |
SDM |
Conference Date |
2013-12-13 - 2013-12-13 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
NAIST |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Fabrication and Characterization of Si related materials |
Paper Information |
Registration To |
SDM |
Conference Code |
2013-12-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Characterization of interface states in SiC MOS structures with various crystal faces by conductance method |
Sub Title (in English) |
|
Keyword(1) |
SiC |
Keyword(2) |
MOS |
Keyword(3) |
Interface State |
Keyword(4) |
Conductance method |
Keyword(5) |
|
Keyword(6) |
|
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
Seiya Nakazawa |
1st Author's Affiliation |
Kyoto University (Kyoto Univ.) |
2nd Author's Name |
Yuichiro Nanen |
2nd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
3rd Author's Name |
Jun Suda |
3rd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
4th Author's Name |
Tsunenobu Kimoto |
4th Author's Affiliation |
Kyoto University (Kyoto Univ.) |
5th Author's Name |
|
5th Author's Affiliation |
() |
6th Author's Name |
|
6th Author's Affiliation |
() |
7th Author's Name |
|
7th Author's Affiliation |
() |
8th Author's Name |
|
8th Author's Affiliation |
() |
9th Author's Name |
|
9th Author's Affiliation |
() |
10th Author's Name |
|
10th Author's Affiliation |
() |
11th Author's Name |
|
11th Author's Affiliation |
() |
12th Author's Name |
|
12th Author's Affiliation |
() |
13th Author's Name |
|
13th Author's Affiliation |
() |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-1 |
Date Time |
2013-12-13 17:20:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2013-133 |
Volume (vol) |
vol.113 |
Number (no) |
no.351 |
Page |
pp.101-105 |
#Pages |
5 |
Date of Issue |
2013-12-06 (SDM) |
|