Conference Information |
Committee |
SDM |
Conference Date |
2013-12-13 - 2013-12-13 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
NAIST |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Fabrication and Characterization of Si related materials |
Paper Information |
Registration To |
SDM |
Conference Code |
2013-12-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Elucidation of Metal Diffusion Mechanism in Conducting-Bridge Random Access Memory (CB-RAM) Using Ab Initio Calculation |
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1st Author's Name |
Sho Yura |
1st Author's Affiliation |
Tottori University (Tottori Univ.) |
2nd Author's Name |
Takahiro Yamasaki |
2nd Author's Affiliation |
National Institute for Materials Science (NIMS) |
3rd Author's Name |
Kengo Nakada |
3rd Author's Affiliation |
Tottori University (Tottori Univ.) |
4th Author's Name |
Akira Ishii |
4th Author's Affiliation |
Tottori University (Tottori Univ.) |
5th Author's Name |
Satoru Kishida |
5th Author's Affiliation |
Tottori University/Tottori University Electronic Display Research Center (Tottori Univ./TEDREC) |
6th Author's Name |
Kentaro Kinoshita |
6th Author's Affiliation |
Tottori University/Tottori University Electronic Display Research Center (Tottori Univ./TEDREC) |
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Speaker |
Author-1 |
Date Time |
2013-12-13 15:40:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
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Volume (vol) |
vol.113 |
Number (no) |
no.351 |
Page |
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Date of Issue |
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