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| Presentation | 2013-12-13 13:50 Development of Low-Temperature Activation of Boron in Silicon Using Soft X-ray Source Akira Heya, Fumito Kusakabe, Yuki Maruyama, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo), Takashi Noguchi (Univ. of the Ryukyus)  SDM2013-127 Link to ES Tech. Rep. Archives: SDM2013-127 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | To realize a ultrathin junction with 10nm depth, a novel activation method of B dopant using soft X-ray undulator was examined. As the photon energy of the irradiated soft X-ray closed to the energy of core level of Si 2p, the activation ratio increased. The effect of soft X-ray irradiation on B activation was remarkable at temperature lower than 400℃. The activation energy of B activation by soft X-ray irradiation (0.06 eV) was lower than that of B activation by thermal annealing (0.18 eV). The activation of B dopant confirmed at low temperature, although the activation ratio shows small values of 6.2×10-3 at 110℃. Furthermore the sheet resistance was slightly reduced by using a cooled holder even at 35℃. At first, the electron at Si2p level was excited by soft X-ray. Next, the Si atoms were ionized and Coulomb repulsion was generated between the ionized Si atoms. The atomic movement of Si atoms was enhanced by ionization and local phonon composition. The crystallinity of Si was recovered. In addition, the substitution of B atom into Si lattice site is occurred via knock-on effect. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Soft X-ray source / Low-temperature activation / Silicon / Boron / Electron excitation / Atomic movement / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 351, SDM2013-127, pp. 67-72, Dec. 2013. | |
| Paper # | SDM2013-127 | |
| Date of Issue | 2013-12-06 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2013-127 Link to ES Tech. Rep. Archives: SDM2013-127 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2013-12-13 - 2013-12-13 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | NAIST |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Characterization of Si related materials |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2013-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of Low-Temperature Activation of Boron in Silicon Using Soft X-ray Source |
| Sub Title (in English) | |
| Keyword(1) | Soft X-ray source |
| Keyword(2) | Low-temperature activation |
| Keyword(3) | Silicon |
| Keyword(4) | Boron |
| Keyword(5) | Electron excitation |
| Keyword(6) | Atomic movement |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Akira Heya |
| 1st Author's Affiliation | University of Hyogo (Univ. of Hyogo) |
| 2nd Author's Name | Fumito Kusakabe |
| 2nd Author's Affiliation | University of Hyogo (Univ. of Hyogo) |
| 3rd Author's Name | Yuki Maruyama |
| 3rd Author's Affiliation | University of Hyogo (Univ. of Hyogo) |
| 4th Author's Name | Naoto Matsuo |
| 4th Author's Affiliation | University of Hyogo (Univ. of Hyogo) |
| 5th Author's Name | Kazuhiro Kanda |
| 5th Author's Affiliation | University of Hyogo (Univ. of Hyogo) |
| 6th Author's Name | Takashi Noguchi |
| 6th Author's Affiliation | University of the Ryukyus (Univ. of the Ryukyus) |
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| Speaker | Author-1 |
| Date Time | 2013-12-13 13:50:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2013-127 |
| Volume (vol) | vol.113 |
| Number (no) | no.351 |
| Page | pp.67-72 |
| #Pages | 6 |
| Date of Issue | 2013-12-06 (SDM) |
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