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Paper Abstract and Keywords
Presentation 2013-12-13 11:40
Low-Temprature CLC Poly-Si TFTs with Sputtered Al2O3 Gate Dielectric Layer
Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.) SDM2013-124 Link to ES Tech. Rep. Archives: SDM2013-124
Abstract (in Japanese) (See Japanese page) 
(in English) A high-k gate dielectric is a technology booster for enhancing the performance of low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs). Continuous-wave laser lateral crystallization (CLC) had already been reported as a powerful tool for forming high-quality lateral large-grained poly-Si thin films. We combined these two technologies and achieved high performance with s.s.=240 mV/dec and field-effect mobility of 140 cm2/Vs. These demonstrated the feasibility of high-k CLC LT poly-Si TFTs.
Keyword (in Japanese) (See Japanese page) 
(in English) TFT / LTPS / Laser Crystallization / SiO_2 / Al_2O_3 / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 351, SDM2013-124, pp. 49-53, Dec. 2013.
Paper # SDM2013-124 
Date of Issue 2013-12-06 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2013-124 Link to ES Tech. Rep. Archives: SDM2013-124

Conference Information
Committee SDM  
Conference Date 2013-12-13 - 2013-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si related materials 
Paper Information
Registration To SDM 
Conference Code 2013-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low-Temprature CLC Poly-Si TFTs with Sputtered Al2O3 Gate Dielectric Layer 
Sub Title (in English)  
Keyword(1) TFT  
Keyword(2) LTPS  
Keyword(3) Laser Crystallization  
Keyword(4) SiO_2  
Keyword(5) Al_2O_3  
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1st Author's Name Tatsuya Meguro  
1st Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
2nd Author's Name Akito Hara  
2nd Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
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Speaker Author-1 
Date Time 2013-12-13 11:40:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2013-124 
Volume (vol) vol.113 
Number (no) no.351 
Page pp.49-53 
#Pages
Date of Issue 2013-12-06 (SDM) 


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