Paper Abstract and Keywords |
Presentation |
2013-12-13 11:40
Low-Temprature CLC Poly-Si TFTs with Sputtered Al2O3 Gate Dielectric Layer Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.) SDM2013-124 Link to ES Tech. Rep. Archives: SDM2013-124 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A high-k gate dielectric is a technology booster for enhancing the performance of low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs). Continuous-wave laser lateral crystallization (CLC) had already been reported as a powerful tool for forming high-quality lateral large-grained poly-Si thin films. We combined these two technologies and achieved high performance with s.s.=240 mV/dec and field-effect mobility of 140 cm2/Vs. These demonstrated the feasibility of high-k CLC LT poly-Si TFTs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
TFT / LTPS / Laser Crystallization / SiO_2 / Al_2O_3 / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 351, SDM2013-124, pp. 49-53, Dec. 2013. |
Paper # |
SDM2013-124 |
Date of Issue |
2013-12-06 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2013-124 Link to ES Tech. Rep. Archives: SDM2013-124 |
Conference Information |
Committee |
SDM |
Conference Date |
2013-12-13 - 2013-12-13 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
NAIST |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Fabrication and Characterization of Si related materials |
Paper Information |
Registration To |
SDM |
Conference Code |
2013-12-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Low-Temprature CLC Poly-Si TFTs with Sputtered Al2O3 Gate Dielectric Layer |
Sub Title (in English) |
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TFT |
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LTPS |
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Laser Crystallization |
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SiO_2 |
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Al_2O_3 |
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1st Author's Name |
Tatsuya Meguro |
1st Author's Affiliation |
Tohoku Gakuin University (Tohoku Gakuin Univ.) |
2nd Author's Name |
Akito Hara |
2nd Author's Affiliation |
Tohoku Gakuin University (Tohoku Gakuin Univ.) |
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Speaker |
Author-1 |
Date Time |
2013-12-13 11:40:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2013-124 |
Volume (vol) |
vol.113 |
Number (no) |
no.351 |
Page |
pp.49-53 |
#Pages |
5 |
Date of Issue |
2013-12-06 (SDM) |