IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2013-11-29 11:00
Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate
Masayoshi Katagiri, Kenta Izumi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hidehiko Oku, Hidetoshi Asamura, Keisuke Kawamura (Air Water R&D) ED2013-79 CPM2013-138 LQE2013-114 Link to ES Tech. Rep. Archives: ED2013-79 CPM2013-138 LQE2013-114
Abstract (in Japanese) (See Japanese page) 
(in English) Since GaN is desired for optical and electronic devices, therefore reduction of substrate cost is very important topic. As it is well known, GaN is difficult to be grown on Si because of large lattice mismatch (17 %), difference of thermal expansion (33 %) and melt-back reaction between Ga and Si. To overcome these problems, we have studied on epitaxy of high-quality GaN on Si with a 3C-SiC intermediate layer. In this study, we investigated effects of 3C-SiC intermediate layer thickness on surface morphology, crystalline quality and curvature of sample.
Keyword (in Japanese) (See Japanese page) 
(in English) Si(111) / 3C-SiC / GaN / MOVPE / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 330, CPM2013-138, pp. 71-74, Nov. 2013.
Paper # CPM2013-138 
Date of Issue 2013-11-21 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-79 CPM2013-138 LQE2013-114 Link to ES Tech. Rep. Archives: ED2013-79 CPM2013-138 LQE2013-114

Conference Information
Committee CPM LQE ED  
Conference Date 2013-11-28 - 2013-11-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride and Compound Semiconductor Devices 
Paper Information
Registration To CPM 
Conference Code 2013-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate 
Sub Title (in English)  
Keyword(1) Si(111)  
Keyword(2) 3C-SiC  
Keyword(3) GaN  
Keyword(4) MOVPE  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Masayoshi Katagiri  
1st Author's Affiliation Mie University (Mie Univ.)
2nd Author's Name Kenta Izumi  
2nd Author's Affiliation Mie University (Mie Univ.)
3rd Author's Name Hideto Miyake  
3rd Author's Affiliation Mie University (Mie Univ.)
4th Author's Name Kazumasa Hiramatsu  
4th Author's Affiliation Mie University (Mie Univ.)
5th Author's Name Hidehiko Oku  
5th Author's Affiliation Air Water R&D Co., Ltd (Air Water R&D)
6th Author's Name Hidetoshi Asamura  
6th Author's Affiliation Air Water R&D Co., Ltd (Air Water R&D)
7th Author's Name Keisuke Kawamura  
7th Author's Affiliation Air Water R&D Co., Ltd (Air Water R&D)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2013-11-29 11:00:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # ED2013-79, CPM2013-138, LQE2013-114 
Volume (vol) vol.113 
Number (no) no.329(ED), no.330(CPM), no.331(LQE) 
Page pp.71-74 
#Pages
Date of Issue 2013-11-21 (ED, CPM, LQE) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan