Paper Abstract and Keywords |
Presentation |
2013-11-29 11:00
Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate Masayoshi Katagiri, Kenta Izumi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hidehiko Oku, Hidetoshi Asamura, Keisuke Kawamura (Air Water R&D) ED2013-79 CPM2013-138 LQE2013-114 Link to ES Tech. Rep. Archives: ED2013-79 CPM2013-138 LQE2013-114 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Since GaN is desired for optical and electronic devices, therefore reduction of substrate cost is very important topic. As it is well known, GaN is difficult to be grown on Si because of large lattice mismatch (17 %), difference of thermal expansion (33 %) and melt-back reaction between Ga and Si. To overcome these problems, we have studied on epitaxy of high-quality GaN on Si with a 3C-SiC intermediate layer. In this study, we investigated effects of 3C-SiC intermediate layer thickness on surface morphology, crystalline quality and curvature of sample. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Si(111) / 3C-SiC / GaN / MOVPE / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 330, CPM2013-138, pp. 71-74, Nov. 2013. |
Paper # |
CPM2013-138 |
Date of Issue |
2013-11-21 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2013-79 CPM2013-138 LQE2013-114 Link to ES Tech. Rep. Archives: ED2013-79 CPM2013-138 LQE2013-114 |
Conference Information |
Committee |
CPM LQE ED |
Conference Date |
2013-11-28 - 2013-11-29 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
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Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride and Compound Semiconductor Devices |
Paper Information |
Registration To |
CPM |
Conference Code |
2013-11-CPM-LQE-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate |
Sub Title (in English) |
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Keyword(1) |
Si(111) |
Keyword(2) |
3C-SiC |
Keyword(3) |
GaN |
Keyword(4) |
MOVPE |
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1st Author's Name |
Masayoshi Katagiri |
1st Author's Affiliation |
Mie University (Mie Univ.) |
2nd Author's Name |
Kenta Izumi |
2nd Author's Affiliation |
Mie University (Mie Univ.) |
3rd Author's Name |
Hideto Miyake |
3rd Author's Affiliation |
Mie University (Mie Univ.) |
4th Author's Name |
Kazumasa Hiramatsu |
4th Author's Affiliation |
Mie University (Mie Univ.) |
5th Author's Name |
Hidehiko Oku |
5th Author's Affiliation |
Air Water R&D Co., Ltd (Air Water R&D) |
6th Author's Name |
Hidetoshi Asamura |
6th Author's Affiliation |
Air Water R&D Co., Ltd (Air Water R&D) |
7th Author's Name |
Keisuke Kawamura |
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Air Water R&D Co., Ltd (Air Water R&D) |
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Speaker |
Author-1 |
Date Time |
2013-11-29 11:00:00 |
Presentation Time |
25 minutes |
Registration for |
CPM |
Paper # |
ED2013-79, CPM2013-138, LQE2013-114 |
Volume (vol) |
vol.113 |
Number (no) |
no.329(ED), no.330(CPM), no.331(LQE) |
Page |
pp.71-74 |
#Pages |
4 |
Date of Issue |
2013-11-21 (ED, CPM, LQE) |
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