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Paper Abstract and Keywords
Presentation 2013-11-29 09:30
OMVPE growth and red luminescence properties of Eu doped GaN/AlGaN multiple quantum well structures
Takanori Arai, Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) ED2013-77 CPM2013-136 LQE2013-112 Link to ES Tech. Rep. Archives: ED2013-77 CPM2013-136 LQE2013-112
Abstract (in Japanese) (See Japanese page) 
(in English) We have grown Eu-doped GaN/AlGaN multiple quantum well (MQW:Eu) structures by organometallic vapor-phase epitaxy, and investigated their luminescence properties. The satellite peaks owing to GaN/AlGaN multiple quantum well structures were observed in X-ray diffraction patterns for the MQW:Eu samples. The photoluminescence (PL) spectra of the MQW:Eu samples exhibited enhancement of Eu luminescence peak intensity and broadening of the peak width compared with Eu-doped GaN (GaN:Eu) grown using the same condition. The integrated PL intensity in MQW:Eu was four times higher than that in GaN:Eu. Photoluminescence excitation (PLE) spectra of MQW:Eu indicated that the enhanced Eu luminescence originated from Eu3+ ions in the GaN well layers.
Keyword (in Japanese) (See Japanese page) 
(in English) Eu / quantum well / OMVPE / GaN / AlGaN / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 331, LQE2013-112, pp. 63-66, Nov. 2013.
Paper # LQE2013-112 
Date of Issue 2013-11-21 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Download PDF ED2013-77 CPM2013-136 LQE2013-112 Link to ES Tech. Rep. Archives: ED2013-77 CPM2013-136 LQE2013-112

Conference Information
Committee CPM LQE ED  
Conference Date 2013-11-28 - 2013-11-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride and Compound Semiconductor Devices 
Paper Information
Registration To LQE 
Conference Code 2013-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) OMVPE growth and red luminescence properties of Eu doped GaN/AlGaN multiple quantum well structures 
Sub Title (in English)  
Keyword(1) Eu  
Keyword(2) quantum well  
Keyword(3) OMVPE  
Keyword(4) GaN  
Keyword(5) AlGaN  
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Keyword(8)  
1st Author's Name Takanori Arai  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Ryuta Wakamatsu  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Dong-gun Lee  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Atsushi Koizumi  
4th Author's Affiliation Osaka University (Osaka Univ.)
5th Author's Name Yasufumi Fujiwara  
5th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker
Date Time 2013-11-29 09:30:00 
Presentation Time 25 
Registration for LQE 
Paper # IEICE-ED2013-77,IEICE-CPM2013-136,IEICE-LQE2013-112 
Volume (vol) IEICE-113 
Number (no) no.329(ED), no.330(CPM), no.331(LQE) 
Page pp.63-66 
#Pages IEICE-4 
Date of Issue IEICE-ED-2013-11-21,IEICE-CPM-2013-11-21,IEICE-LQE-2013-11-21 


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