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| Presentation | 2013-11-29 11:50 Control of nucleation for AlN growth on 6H-SiC substrate by low-pressure HVPE Shin Kitagawa, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.)  ED2013-81 CPM2013-140 LQE2013-116 Link to ES Tech. Rep. Archives: ED2013-81 CPM2013-140 LQE2013-116 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Aluminum nitride (AlN) has a direct bandgap energy of 6.2 eV, which is the largest bandgap energy among III-V semiconductors. Consequently, AlN has significant potential for many applications, such as high power ultra violet (UV) light emitting diodes, laser diodes, and UV detector. However, it is difficult to fabricate thick and crack-free AlN layers owing to the lack of native substrates. 6H-SiC is a more suitable substrate than sapphire because of its better lattice match to AlN. However, AlN growth on 6H-SiC substrate generated dislocation density for 10^9-10-^10 cm^-2. There is a method of controlling nucleation and lateral growth using the three-dimensional (3D) and two-dimensional (2D) growth modes to reduce dislocation density. We performed control of nucleation for AlN growth on 6H-SiC substrate by low-pressure HVPE. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Low-pressure HVPE / AlN / 6H-SiC / 3D-2D method / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 330, CPM2013-140, pp. 79-82, Nov. 2013. | |
| Paper # | CPM2013-140 | |
| Date of Issue | 2013-11-21 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2013-81 CPM2013-140 LQE2013-116 Link to ES Tech. Rep. Archives: ED2013-81 CPM2013-140 LQE2013-116 |
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| Conference Information | |
| Committee | CPM LQE ED |
| Conference Date | 2013-11-28 - 2013-11-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Ｎｉｔｒide and Compound Semiconductor Devices |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2013-11-CPM-LQE-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Control of nucleation for AlN growth on 6H-SiC substrate by low-pressure HVPE |
| Sub Title (in English) | |
| Keyword(1) | Low-pressure HVPE |
| Keyword(2) | AlN |
| Keyword(3) | 6H-SiC |
| Keyword(4) | 3D-2D method |
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| Keyword(8) | |
| 1st Author's Name | Shin Kitagawa |
| 1st Author's Affiliation | Mie University (Mie Univ.) |
| 2nd Author's Name | Hideto Miyake |
| 2nd Author's Affiliation | Mie University (Mie Univ.) |
| 3rd Author's Name | Kazumasa Hiramatsu |
| 3rd Author's Affiliation | Mie University (Mie Univ.) |
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| Speaker | Author-1 |
| Date Time | 2013-11-29 11:50:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | ED2013-81, CPM2013-140, LQE2013-116 |
| Volume (vol) | vol.113 |
| Number (no) | no.329(ED), no.330(CPM), no.331(LQE) |
| Page | pp.79-82 |
| #Pages | 4 |
| Date of Issue | 2013-11-21 (ED, CPM, LQE) |
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