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Paper Abstract and Keywords
Presentation 2013-11-29 09:55
Deep-level transient spectroscopy study on defect levels in Eu,Si-codoped GaN grown by organometallic vapor phase epitaxy
Souichirou Kuwata, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) ED2013-78 CPM2013-137 LQE2013-113 Link to ES Tech. Rep. Archives: ED2013-78 CPM2013-137 LQE2013-113
Abstract (in Japanese) (See Japanese page) 
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Reference Info. IEICE Tech. Rep., vol. 113, no. 331, LQE2013-113, pp. 67-70, Nov. 2013.
Paper # LQE2013-113 
Date of Issue 2013-11-21 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-78 CPM2013-137 LQE2013-113 Link to ES Tech. Rep. Archives: ED2013-78 CPM2013-137 LQE2013-113

Conference Information
Committee CPM LQE ED  
Conference Date 2013-11-28 - 2013-11-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride and Compound Semiconductor Devices 
Paper Information
Registration To LQE 
Conference Code 2013-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Deep-level transient spectroscopy study on defect levels in Eu,Si-codoped GaN grown by organometallic vapor phase epitaxy 
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1st Author's Name Souichirou Kuwata  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Atsushi Koizumi  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Yasufumi Fujiwara  
3rd Author's Affiliation Osaka University (Osaka Univ.)
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Speaker
Date Time 2013-11-29 09:55:00 
Presentation Time 25 
Registration for LQE 
Paper # IEICE-ED2013-78,IEICE-CPM2013-137,IEICE-LQE2013-113 
Volume (vol) IEICE-113 
Number (no) no.329(ED), no.330(CPM), no.331(LQE) 
Page pp.67-70 
#Pages IEICE-4 
Date of Issue IEICE-ED-2013-11-21,IEICE-CPM-2013-11-21,IEICE-LQE-2013-11-21 


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