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| Presentation | 2013-11-28 15:50 Quantum Efficiency of p-GaN with NEA surface for high brightness electron source Takuya Maekawa, Yoshio Honda, Hiroshi Amano, Tomohiro Nishitani (Nagoya Univ.)  ED2013-73 CPM2013-132 LQE2013-108 Link to ES Tech. Rep. Archives: ED2013-73 CPM2013-132 LQE2013-108 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We report the lifetime and high brightness condition of the NEA GaN surface for the high brightness and durability of the electron source using the p-type semiconductor surface with the negative electron affinity. After making the NEA surface on the p-GaN substrate in the ultra-high vacuum, we measured the wavelength and lifetime dependents of the quantum efficiency. We confirmed that the p-GaN substrate has over twenty times as long lifetime as p-GaAs substrate and it has the higher durability performance by the result. In addition, we knew that the quantum efficiency below the bandgap energy is decreased especially with deterioration of the surface function. By these results, NEA photocathode electron source using the p-GaN has the high durability and their deteriorated surface was suitable for becoming single color of the electron beam. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / GaAs / NEA / Photocathode / electron beam source / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 331, LQE2013-108, pp. 43-46, Nov. 2013. | |
| Paper # | LQE2013-108 | |
| Date of Issue | 2013-11-21 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2013-73 CPM2013-132 LQE2013-108 Link to ES Tech. Rep. Archives: ED2013-73 CPM2013-132 LQE2013-108 |
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| Conference Information | |
| Committee | CPM LQE ED |
| Conference Date | 2013-11-28 - 2013-11-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Ｎｉｔｒide and Compound Semiconductor Devices |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2013-11-CPM-LQE-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Quantum Efficiency of p-GaN with NEA surface for high brightness electron source |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | GaAs |
| Keyword(3) | NEA |
| Keyword(4) | Photocathode |
| Keyword(5) | electron beam source |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takuya Maekawa |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Yoshio Honda |
| 2nd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 3rd Author's Name | Hiroshi Amano |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 4th Author's Name | Tomohiro Nishitani |
| 4th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2013-11-28 15:50:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2013-73, CPM2013-132, LQE2013-108 |
| Volume (vol) | vol.113 |
| Number (no) | no.329(ED), no.330(CPM), no.331(LQE) |
| Page | pp.43-46 |
| #Pages | 4 |
| Date of Issue | 2013-11-21 (ED, CPM, LQE) |
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