Paper Abstract and Keywords |
Presentation |
2013-10-25 11:50
Preparation of carbon thin films by gas flow sputtering in high-density plasma Takuma Ishii, Yuji Satou, Takaharu Watanabe, Kiyoshi Ishii, Hiroshi Sakuma (Utsunomiya Univ.) CPM2013-107 Link to ES Tech. Rep. Archives: CPM2013-107 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
High-quality diamond thin films are successfully obtained by plasma-assisted CVD. On the other hand, carbon films with a diamond single phase are hardly prepared by PVD processes such as sputtering. In order to fabricate diamond films by PVD process, we investigated the deposition process and film structure of carbon films sputtered by gas flow sputtering (GFS) method. GFS is a high-pressure (~100 Pa) sputtering and has characteristics between PVD and CVD, and, moreover, enables the film deposition in a high-density plasma. The film structures of carbon films deposited at various temperatures and plasma densities were investigated, resulting in the observation of growth of nanocrystalline diamond films at substrate temperatures above 600 °C and under high-density plasma conditions. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Sputtering / Sputtered Film / Carbon Thin Film / Diamond Thin Film / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 268, CPM2013-107, pp. 67-71, Oct. 2013. |
Paper # |
CPM2013-107 |
Date of Issue |
2013-10-17 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
CPM2013-107 Link to ES Tech. Rep. Archives: CPM2013-107 |
Conference Information |
Committee |
CPM |
Conference Date |
2013-10-24 - 2013-10-25 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Niigata Univ. Satellite Campus TOKIMEITO |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Preparation of Thin Films, Materials for Physics and Applications, etc. |
Paper Information |
Registration To |
CPM |
Conference Code |
2013-10-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Preparation of carbon thin films by gas flow sputtering in high-density plasma |
Sub Title (in English) |
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Keyword(1) |
Sputtering |
Keyword(2) |
Sputtered Film |
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Carbon Thin Film |
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Diamond Thin Film |
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1st Author's Name |
Takuma Ishii |
1st Author's Affiliation |
Utsunomiya University (Utsunomiya Univ.) |
2nd Author's Name |
Yuji Satou |
2nd Author's Affiliation |
Utsunomiya University (Utsunomiya Univ.) |
3rd Author's Name |
Takaharu Watanabe |
3rd Author's Affiliation |
Utsunomiya University (Utsunomiya Univ.) |
4th Author's Name |
Kiyoshi Ishii |
4th Author's Affiliation |
Utsunomiya University (Utsunomiya Univ.) |
5th Author's Name |
Hiroshi Sakuma |
5th Author's Affiliation |
Utsunomiya University (Utsunomiya Univ.) |
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Speaker |
Author-1 |
Date Time |
2013-10-25 11:50:00 |
Presentation Time |
25 minutes |
Registration for |
CPM |
Paper # |
CPM2013-107 |
Volume (vol) |
vol.113 |
Number (no) |
no.268 |
Page |
pp.67-71 |
#Pages |
5 |
Date of Issue |
2013-10-17 (CPM) |
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