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Paper Abstract and Keywords
Presentation 2013-10-24 10:00
Development of high performance ultrafast intersubband all-optical gate switch using ion implantation
Ryoichi Akimoto, Feng Jijun, Shin-ichiro Gozu, Teruo Mozume, Hiroshi Ishikawa (AIST) OCS2013-48 OPE2013-94 LQE2013-64 Link to ES Tech. Rep. Archives: OPE2013-94 LQE2013-64
Abstract (in Japanese) (See Japanese page) 
(in English) We demonstrate a compact all-optical Michelson interferometer (MI) gating switch with monolithic integration of two different bandgap energies. Based on the ion-induced intermixing in InGaAs/AlAsSb coupled double quantum wells, the blueshift of the band edge can be tailored. Through phosphorus ion implantation and subsequent annealing, an implanted sample can acquire a high transmittance compared with the as-grown one. Meanwhile, the crossphase modulation (XPM) efficiency of a non-implanted sample undergoing the same annealing process decreases little. An implanted part for signal propagation and a non-implanted section for XPM are thus monolithically integrated for an MI switch by an area-selective manner. Full switching of a π-rad nonlinear phase shift is achieved with pump pulse energy of 5.6 pJ.
Keyword (in Japanese) (See Japanese page) 
(in English) intersubband transition / InGaAs/AlAsSb quantum well / cross-phase modulation / ion implantation / optical gate switch / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 264, LQE2013-64, pp. 5-8, Oct. 2013.
Paper # LQE2013-64 
Date of Issue 2013-10-17 (OCS, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF OCS2013-48 OPE2013-94 LQE2013-64 Link to ES Tech. Rep. Archives: OPE2013-94 LQE2013-64

Conference Information
Committee LQE OCS OPE  
Conference Date 2013-10-24 - 2013-10-25 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2013-10-LQE-OCS-OPE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of high performance ultrafast intersubband all-optical gate switch using ion implantation 
Sub Title (in English)  
Keyword(1) intersubband transition  
Keyword(2) InGaAs/AlAsSb quantum well  
Keyword(3) cross-phase modulation  
Keyword(4) ion implantation  
Keyword(5) optical gate switch  
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Keyword(8)  
1st Author's Name Ryoichi Akimoto  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Feng Jijun  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Shin-ichiro Gozu  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Teruo Mozume  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Hiroshi Ishikawa  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker Author-1 
Date Time 2013-10-24 10:00:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # OCS2013-48, OPE2013-94, LQE2013-64 
Volume (vol) vol.113 
Number (no) no.262(OCS), no.263(OPE), no.264(LQE) 
Page pp.5-8 
#Pages
Date of Issue 2013-10-17 (OCS, OPE, LQE) 


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