Paper Abstract and Keywords |
Presentation |
2013-10-24 10:00
Development of high performance ultrafast intersubband all-optical gate switch using ion implantation Ryoichi Akimoto, Feng Jijun, Shin-ichiro Gozu, Teruo Mozume, Hiroshi Ishikawa (AIST) OCS2013-48 OPE2013-94 LQE2013-64 Link to ES Tech. Rep. Archives: OPE2013-94 LQE2013-64 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We demonstrate a compact all-optical Michelson interferometer (MI) gating switch with monolithic integration of two different bandgap energies. Based on the ion-induced intermixing in InGaAs/AlAsSb coupled double quantum wells, the blueshift of the band edge can be tailored. Through phosphorus ion implantation and subsequent annealing, an implanted sample can acquire a high transmittance compared with the as-grown one. Meanwhile, the crossphase modulation (XPM) efficiency of a non-implanted sample undergoing the same annealing process decreases little. An implanted part for signal propagation and a non-implanted section for XPM are thus monolithically integrated for an MI switch by an area-selective manner. Full switching of a π-rad nonlinear phase shift is achieved with pump pulse energy of 5.6 pJ. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
intersubband transition / InGaAs/AlAsSb quantum well / cross-phase modulation / ion implantation / optical gate switch / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 264, LQE2013-64, pp. 5-8, Oct. 2013. |
Paper # |
LQE2013-64 |
Date of Issue |
2013-10-17 (OCS, OPE, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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OCS2013-48 OPE2013-94 LQE2013-64 Link to ES Tech. Rep. Archives: OPE2013-94 LQE2013-64 |
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