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Paper Abstract and Keywords
Presentation 2013-08-09 11:20
Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction
Wang Xin, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-49 Link to ES Tech. Rep. Archives: ED2013-49
Abstract (in Japanese) (See Japanese page) 
(in English) Recently, devices with three-dimensional structure such as nanowire field effect transistor (NW-FETs) and FinFETs has extensively studied. In most of these studies, the base structures such as nanowire or Fin structure were formed by using selective area growth or catalyst assisted vapor-liquid-solid (VLS) growth technique, and by using chemical vapor deposition(CVD) growth method. In this research, we paid attention to the surface reconstruction induced by In and Sb atoms on the Si substrate at the initial stage of growth of InSb films. In that process, we found that the sticking coefficient of In atoms goes to 0 above certain temperature (450℃) onto Sb-(√3×√3)or Sb-(2×1) surface reconstruction. Based on this result, we studied the trial of the selective epitaxial growth of InSb by on Si(111) using Sb-(√3×√3)surface phase.
Keyword (in Japanese) (See Japanese page) 
(in English) Si(111) / InSb / Reconstructed surface / Selective epitaxial growth / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 176, ED2013-49, pp. 61-65, Aug. 2013.
Paper # ED2013-49 
Date of Issue 2013-08-01 (ED) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-49 Link to ES Tech. Rep. Archives: ED2013-49

Conference Information
Committee ED  
Conference Date 2013-08-08 - 2013-08-09 
Place (in Japanese) (See Japanese page) 
Place (in English) University of Toyama 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2013-08-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction 
Sub Title (in English)  
Keyword(1) Si(111)  
Keyword(2) InSb  
Keyword(3) Reconstructed surface  
Keyword(4) Selective epitaxial growth  
1st Author's Name Wang Xin  
1st Author's Affiliation University of Toyama (Univ. of Toyama)
2nd Author's Name Masayuki Mori  
2nd Author's Affiliation University of Toyama (Univ. of Toyama)
3rd Author's Name Koichi Maezawa  
3rd Author's Affiliation University of Toyama (Univ. of Toyama)
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Date Time 2013-08-09 11:20:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2013-49 
Volume (vol) IEICE-113 
Number (no) no.176 
Page pp.61-65 
#Pages IEICE-5 
Date of Issue IEICE-ED-2013-08-01 

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