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Presentation 2013-08-09 09:50
Formation of GaSb Islands on Si(111) Substrate Using Ga/Si(111) Surface Reconstructions
Ryuto Machida, Ryusuke Toda, Keisuke Yoshiki, Sachie Fujikawa (Tokyo Univ. of Science), Shinsuke Hara (NICT), Katsumi Irokawa, Hirofumi Miki (Tokyo Univ. of Science), Akira Kawazu (Tokyo Denki Univ.), Hiroki I. Fujishiro (Tokyo Univ. of Science) ED2013-46 Link to ES Tech. Rep. Archives: ED2013-46
Abstract (in Japanese) (See Japanese page) 
(in English) Gallium antimonide (GaSb) nanostructures on Si (Silicon) have been intensely studied due to the application as a near-infrared light source. Therefore, it is important to control the formation of GaSb nanostructure by epitaxial growth technique. In this study, we have studied the effect of several types of the Ga/Si(111) surface reconstructions on the growth morphology of GaSb islands by ultrahigh-vacuum scanning tunneling microscopy (UHV-STM) and non-contact atomic force microscopy (NC-AFM). On the Ga/Si(111)-√3×√3, the high-density and uniform-sized GaSb islands were formed at 350 °C.
Keyword (in Japanese) (See Japanese page) 
(in English) GaSb / Si(111) / scanning tunneling microscopy / atomic force microscopy / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 176, ED2013-46, pp. 43-48, Aug. 2013.
Paper # ED2013-46 
Date of Issue 2013-08-01 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-46 Link to ES Tech. Rep. Archives: ED2013-46

Conference Information
Committee ED  
Conference Date 2013-08-08 - 2013-08-09 
Place (in Japanese) (See Japanese page) 
Place (in English) University of Toyama 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2013-08-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation of GaSb Islands on Si(111) Substrate Using Ga/Si(111) Surface Reconstructions 
Sub Title (in English)  
Keyword(1) GaSb  
Keyword(2) Si(111)  
Keyword(3) scanning tunneling microscopy  
Keyword(4) atomic force microscopy  
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Keyword(6)  
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1st Author's Name Ryuto Machida  
1st Author's Affiliation Tokyo University of Science (Tokyo Univ. of Science)
2nd Author's Name Ryusuke Toda  
2nd Author's Affiliation Tokyo University of Science (Tokyo Univ. of Science)
3rd Author's Name Keisuke Yoshiki  
3rd Author's Affiliation Tokyo University of Science (Tokyo Univ. of Science)
4th Author's Name Sachie Fujikawa  
4th Author's Affiliation Tokyo University of Science (Tokyo Univ. of Science)
5th Author's Name Shinsuke Hara  
5th Author's Affiliation National Institute of Information and Communications Technology (NICT)
6th Author's Name Katsumi Irokawa  
6th Author's Affiliation Tokyo University of Science (Tokyo Univ. of Science)
7th Author's Name Hirofumi Miki  
7th Author's Affiliation Tokyo University of Science (Tokyo Univ. of Science)
8th Author's Name Akira Kawazu  
8th Author's Affiliation Tokyo Denki University (Tokyo Denki Univ.)
9th Author's Name Hiroki I. Fujishiro  
9th Author's Affiliation Tokyo University of Science (Tokyo Univ. of Science)
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Speaker Author-1 
Date Time 2013-08-09 09:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2013-46 
Volume (vol) vol.113 
Number (no) no.176 
Page pp.43-48 
#Pages
Date of Issue 2013-08-01 (ED) 


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