Paper Abstract and Keywords |
Presentation |
2013-08-09 09:50
Formation of GaSb Islands on Si(111) Substrate Using Ga/Si(111) Surface Reconstructions Ryuto Machida, Ryusuke Toda, Keisuke Yoshiki, Sachie Fujikawa (Tokyo Univ. of Science), Shinsuke Hara (NICT), Katsumi Irokawa, Hirofumi Miki (Tokyo Univ. of Science), Akira Kawazu (Tokyo Denki Univ.), Hiroki I. Fujishiro (Tokyo Univ. of Science) ED2013-46 Link to ES Tech. Rep. Archives: ED2013-46 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Gallium antimonide (GaSb) nanostructures on Si (Silicon) have been intensely studied due to the application as a near-infrared light source. Therefore, it is important to control the formation of GaSb nanostructure by epitaxial growth technique. In this study, we have studied the effect of several types of the Ga/Si(111) surface reconstructions on the growth morphology of GaSb islands by ultrahigh-vacuum scanning tunneling microscopy (UHV-STM) and non-contact atomic force microscopy (NC-AFM). On the Ga/Si(111)-√3×√3, the high-density and uniform-sized GaSb islands were formed at 350 °C. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaSb / Si(111) / scanning tunneling microscopy / atomic force microscopy / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 176, ED2013-46, pp. 43-48, Aug. 2013. |
Paper # |
ED2013-46 |
Date of Issue |
2013-08-01 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2013-46 Link to ES Tech. Rep. Archives: ED2013-46 |