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Paper Abstract and Keywords
Presentation 2013-08-01 09:00
Analysis of Steep Subthreshold Slope Characteristics in SOI MOSFET
Takayuki Mori, Jiro Ida (Kanazawa Inst. of Tech.) SDM2013-65 ICD2013-47 Link to ES Tech. Rep. Archives: SDM2013-65 ICD2013-47
Abstract (in Japanese) (See Japanese page) 
(in English) We have found out that the steep Subthreshold Slope (SS) appears in the Floating-Body (FB) and the Body-Tied (BT) SOI MOSFET and its mechanism have investigated. The steep SS in the FB occurs by Floating Body Effect (FBE), while the steep SS in the BT occurs by Parasitic Bipolar Transistor (PBT) caused by the voltage drop with the body current. In addition to those, the steep SS tends to appear in the Partially Depleted (PD) SOI MOSFET. In order to generate the steep SS at lower voltages, it is necessary to optimize the SOI film thickness and the gate oxide thickness by a different method from the con-ventional scaling.
Keyword (in Japanese) (See Japanese page) 
(in English) SOI / Floating-Body / Body-Tied / Steep Subthreshold Slope / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 172, SDM2013-65, pp. 1-6, Aug. 2013.
Paper # SDM2013-65 
Date of Issue 2013-07-25 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Download PDF SDM2013-65 ICD2013-47 Link to ES Tech. Rep. Archives: SDM2013-65 ICD2013-47

Conference Information
Committee SDM ICD  
Conference Date 2013-08-01 - 2013-08-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Kanazawa University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To SDM 
Conference Code 2013-08-SDM-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analysis of Steep Subthreshold Slope Characteristics in SOI MOSFET 
Sub Title (in English)  
Keyword(1) SOI  
Keyword(2) Floating-Body  
Keyword(3) Body-Tied  
Keyword(4) Steep Subthreshold Slope  
1st Author's Name Takayuki Mori  
1st Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. of Tech.)
2nd Author's Name Jiro Ida  
2nd Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. of Tech.)
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Date Time 2013-08-01 09:00:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2013-65,IEICE-ICD2013-47 
Volume (vol) IEICE-113 
Number (no) no.172(SDM), no.173(ICD) 
Page pp.1-6 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2013-07-25,IEICE-ICD-2013-07-25 

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