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Paper Abstract and Keywords
Presentation 2013-08-01 09:25
Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect
Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Kazuhiko Endo, Takashi Matsukawa, Shin-ichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2013-66 ICD2013-48 Link to ES Tech. Rep. Archives: SDM2013-66 ICD2013-48
Abstract (in Japanese) (See Japanese page) 
(in English) A synthetic electric field effect to enhance the performance of tunnel field-effect transistors (TFETs) is proposed. The TFET utilizes both top- and side-gate electric fields induced by a wrapped gate electrode configuration. The device concept was experimentally verified by fabricating Si-TFETs integrated with ultrathin epitaxial channel. Scaling of both the channel width and channel thickness enhances the TFET performance owing to the enhanced synthetic electric field.
Keyword (in Japanese) (See Japanese page) 
(in English) Tunnel FET / TFET / synthetic electric field / epitaxial growth / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 172, SDM2013-66, pp. 7-12, Aug. 2013.
Paper # SDM2013-66 
Date of Issue 2013-07-25 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2013-66 ICD2013-48 Link to ES Tech. Rep. Archives: SDM2013-66 ICD2013-48

Conference Information
Committee SDM ICD  
Conference Date 2013-08-01 - 2013-08-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Kanazawa University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To SDM 
Conference Code 2013-08-SDM-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect 
Sub Title (in English)  
Keyword(1) Tunnel FET  
Keyword(2) TFET  
Keyword(3) synthetic electric field  
Keyword(4) epitaxial growth  
1st Author's Name Yukinori Morita  
1st Author's Affiliation AIST (AIST)
2nd Author's Name Takahiro Mori  
2nd Author's Affiliation AIST (AIST)
3rd Author's Name Shinji Migita  
3rd Author's Affiliation AIST (AIST)
4th Author's Name Wataru Mizubayashi  
4th Author's Affiliation AIST (AIST)
5th Author's Name Akihito Tanabe  
5th Author's Affiliation AIST (AIST)
6th Author's Name Koichi Fukuda  
6th Author's Affiliation AIST (AIST)
7th Author's Name Kazuhiko Endo  
7th Author's Affiliation AIST (AIST)
8th Author's Name Takashi Matsukawa  
8th Author's Affiliation AIST (AIST)
9th Author's Name Shin-ichi O'uchi  
9th Author's Affiliation AIST (AIST)
10th Author's Name Yongxun Liu  
10th Author's Affiliation AIST (AIST)
11th Author's Name Meishoku Masahara  
11th Author's Affiliation AIST (AIST)
12th Author's Name Hiroyuki Ota  
12th Author's Affiliation AIST (AIST)
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Date Time 2013-08-01 09:25:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2013-66,IEICE-ICD2013-48 
Volume (vol) IEICE-113 
Number (no) no.172(SDM), no.173(ICD) 
Page pp.7-12 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2013-07-25,IEICE-ICD-2013-07-25 

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