Paper Abstract and Keywords |
Presentation |
2013-08-01 09:25
Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Kazuhiko Endo, Takashi Matsukawa, Shin-ichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2013-66 ICD2013-48 Link to ES Tech. Rep. Archives: SDM2013-66 ICD2013-48 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A synthetic electric field effect to enhance the performance of tunnel field-effect transistors (TFETs) is proposed. The TFET utilizes both top- and side-gate electric fields induced by a wrapped gate electrode configuration. The device concept was experimentally verified by fabricating Si-TFETs integrated with ultrathin epitaxial channel. Scaling of both the channel width and channel thickness enhances the TFET performance owing to the enhanced synthetic electric field. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Tunnel FET / TFET / synthetic electric field / epitaxial growth / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 172, SDM2013-66, pp. 7-12, Aug. 2013. |
Paper # |
SDM2013-66 |
Date of Issue |
2013-07-25 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2013-66 ICD2013-48 Link to ES Tech. Rep. Archives: SDM2013-66 ICD2013-48 |
Conference Information |
Committee |
SDM ICD |
Conference Date |
2013-08-01 - 2013-08-02 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kanazawa University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Low voltage/low power techniques, novel devices, circuits, and applications |
Paper Information |
Registration To |
SDM |
Conference Code |
2013-08-SDM-ICD |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect |
Sub Title (in English) |
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Keyword(1) |
Tunnel FET |
Keyword(2) |
TFET |
Keyword(3) |
synthetic electric field |
Keyword(4) |
epitaxial growth |
Keyword(5) |
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Keyword(6) |
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Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Yukinori Morita |
1st Author's Affiliation |
AIST (AIST) |
2nd Author's Name |
Takahiro Mori |
2nd Author's Affiliation |
AIST (AIST) |
3rd Author's Name |
Shinji Migita |
3rd Author's Affiliation |
AIST (AIST) |
4th Author's Name |
Wataru Mizubayashi |
4th Author's Affiliation |
AIST (AIST) |
5th Author's Name |
Akihito Tanabe |
5th Author's Affiliation |
AIST (AIST) |
6th Author's Name |
Koichi Fukuda |
6th Author's Affiliation |
AIST (AIST) |
7th Author's Name |
Kazuhiko Endo |
7th Author's Affiliation |
AIST (AIST) |
8th Author's Name |
Takashi Matsukawa |
8th Author's Affiliation |
AIST (AIST) |
9th Author's Name |
Shin-ichi O'uchi |
9th Author's Affiliation |
AIST (AIST) |
10th Author's Name |
Yongxun Liu |
10th Author's Affiliation |
AIST (AIST) |
11th Author's Name |
Meishoku Masahara |
11th Author's Affiliation |
AIST (AIST) |
12th Author's Name |
Hiroyuki Ota |
12th Author's Affiliation |
AIST (AIST) |
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Speaker |
Author-1 |
Date Time |
2013-08-01 09:25:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2013-66, ICD2013-48 |
Volume (vol) |
vol.113 |
Number (no) |
no.172(SDM), no.173(ICD) |
Page |
pp.7-12 |
#Pages |
6 |
Date of Issue |
2013-07-25 (SDM, ICD) |
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