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| Presentation | 2013-07-25 14:00 High-Frequency Gate Drive Circuit for GaN FETs with Wireless Power Transfer Akihiro Nishigaki, Takashi Yoshida, Yasuki Kanazawa, Jun Imaoka, Hirokatsu Umegami, Fumiya Hattori, Masayoshi Yamamoto (Shimane Univ.)  EE2013-10 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | This paper introduces three high frequency gate drive circuits for GaN FETs in wireless power transfer applications using push-pull class E converter. GaN FETs have diode characteristic between the gate-source. The proposal gate drive circuits can decrease the losses which are caused by parasitic effects of the GaN FETs diode. Therefore, an exclusive gate drive circuit is necessary in order to apply GaN FET to drive circuits. Drive circuits are compared from the view point of switching losses and conduction losses which were tested through implementation on a prototype application. Finally, the most suitable drive circuit is highlighted in the experimental results. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Wireless Power Transfer / GaN FETs / Gate Drive Circuit / High-frequency / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 155, EE2013-10, pp. 13-17, July 2013. | |
| Paper # | EE2013-10 | |
| Date of Issue | 2013-07-18 (EE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EE2013-10 |
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| Conference Information | |
| Committee | EE WPT IEE-SPC |
| Conference Date | 2013-07-25 - 2013-07-26 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | EE |
| Conference Code | 2013-07-EE-WPT-SPC |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-Frequency Gate Drive Circuit for GaN FETs with Wireless Power Transfer |
| Sub Title (in English) | |
| Keyword(1) | Wireless Power Transfer |
| Keyword(2) | GaN FETs |
| Keyword(3) | Gate Drive Circuit |
| Keyword(4) | High-frequency |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Akihiro Nishigaki |
| 1st Author's Affiliation | Shimane University (Shimane Univ.) |
| 2nd Author's Name | Takashi Yoshida |
| 2nd Author's Affiliation | Shimane University (Shimane Univ.) |
| 3rd Author's Name | Yasuki Kanazawa |
| 3rd Author's Affiliation | Shimane University (Shimane Univ.) |
| 4th Author's Name | Jun Imaoka |
| 4th Author's Affiliation | Shimane University (Shimane Univ.) |
| 5th Author's Name | Hirokatsu Umegami |
| 5th Author's Affiliation | Shimane University (Shimane Univ.) |
| 6th Author's Name | Fumiya Hattori |
| 6th Author's Affiliation | Shimane University (Shimane Univ.) |
| 7th Author's Name | Masayoshi Yamamoto |
| 7th Author's Affiliation | Shimane University (Shimane Univ.) |
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| Speaker | Author-1 |
| Date Time | 2013-07-25 14:00:00 |
| Presentation Time | 25 minutes |
| Registration for | EE |
| Paper # | EE2013-10 |
| Volume (vol) | vol.113 |
| Number (no) | no.155 |
| Page | pp.13-17 |
| #Pages | 5 |
| Date of Issue | 2013-07-18 (EE) |
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