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Paper Abstract and Keywords
Presentation 2013-06-21 14:45
A theretical discussion for testabilty of a degraded LSI in field
Yasuo Sato, Seiji Kajihara (Kyushu Inst. of Tech.) DC2013-12
Abstract (in Japanese) (See Japanese page) 
(in English) Various electronic systems that consist of variety of LSIs require very high reliability in field. However, physical degradation phenomena such as BTI (Bias Temperature Instability) make it difficult to keep the reliability in field only by conventional fabrication LSI testing. Therefore, many reports or researches in regard to monitoring technologies or field testing have begun to be published. Although intensive researches have done in physical modeling of degradation, it does not seem that so many researches are being done in the degradation activities themselves or the required functionalities of field testing that are based on the modeling. This paper addresses various parameters that affect field reliability of LSIs by a simulation, which is based-on a typical physical model. As it is difficult to define many parameter values correctly and is also hard to get actual reliability data in field, it is impossible to adjust the simulated FIT number to the actual number. However, the authors show that a qualitative discussion clarify the impact of each parameter.
Keyword (in Japanese) (See Japanese page) 
(in English) Field / Degradation / BTI / Test / Fabrication variation / FIT / LSI / Semiconductor devices  
Reference Info. IEICE Tech. Rep., vol. 113, no. 104, DC2013-12, pp. 13-18, June 2013.
Paper # DC2013-12 
Date of Issue 2013-06-14 (DC) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee DC  
Conference Date 2013-06-21 - 2013-06-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Design, Test, Verification 
Paper Information
Registration To DC 
Conference Code 2013-06-DC 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A theretical discussion for testabilty of a degraded LSI in field 
Sub Title (in English)  
Keyword(1) Field  
Keyword(2) Degradation  
Keyword(3) BTI  
Keyword(4) Test  
Keyword(5) Fabrication variation  
Keyword(6) FIT  
Keyword(7) LSI  
Keyword(8) Semiconductor devices  
1st Author's Name Yasuo Sato  
1st Author's Affiliation Kyushu Institute of Technology (Kyushu Inst. of Tech.)
2nd Author's Name Seiji Kajihara  
2nd Author's Affiliation Kyushu Institute of Technology (Kyushu Inst. of Tech.)
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Date Time 2013-06-21 14:45:00 
Presentation Time 30 
Registration for DC 
Paper # IEICE-DC2013-12 
Volume (vol) IEICE-113 
Number (no) no.104 
Page pp.13-18 
#Pages IEICE-6 
Date of Issue IEICE-DC-2013-06-14 

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