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Paper Abstract and Keywords
Presentation 2013-06-18 09:40
Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-46 Link to ES Tech. Rep. Archives: SDM2013-46
Abstract (in Japanese) (See Japanese page) 
(in English) Currently, it is reported that the Ge surface oxidation through the thin Al2O3 layer using oxygen plasma (post plasma oxidation) realizes a low interface state density (Dit) with the formation of the extremely thin GeOx interfacial layer. However, the reaction mechanism at the Al2O3/Ge interface with the post oxidation and the correlation between the interface structure and property have not been enough understood yet. In this study, we clarified the reaction mechanism of the post thermal oxidation of the Al2O3/Ge structure and discussed the correlation between the interface structure and property. The Al6Ge2O13 layer which is a stable AlGeO compound was preferentially formed near the Al2O3/Ge interface and the GeO2 layer was also formed on the Al2O3 surface with Ge or GeO diffusion into or through the Al2O3 layer. It is also found that the activation energy of the Al6Ge2O13 formation estimated to be 0.20 eV was lower than that of the GeO2 formation which is limited by the oxygen diffusion in the Al2O3 layer. Furthermore, it is found that Dit around the midgap of Ge decreases with the formation of the AlGeO near the Al2O3/Ge interface. Therefore, the formation of AlGeO near Al2O3/Ge interface is one of the important keys for further improvement of the interface property.
Keyword (in Japanese) (See Japanese page) 
(in English) Al2O3/Ge / Thermal oxidation / Interface state density / AlGeO / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 87, SDM2013-46, pp. 13-18, June 2013.
Paper # SDM2013-46 
Date of Issue 2013-06-11 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2013-46 Link to ES Tech. Rep. Archives: SDM2013-46

Conference Information
Committee SDM  
Conference Date 2013-06-18 - 2013-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2013-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties 
Sub Title (in English)  
Keyword(1) Al2O3/Ge  
Keyword(2) Thermal oxidation  
Keyword(3) Interface state density  
Keyword(4) AlGeO  
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1st Author's Name Shigehisa Shibayama  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Kimihiko Kato  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Mitsuo Sakashita  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Wakana Takeuchi  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Noriyuki Taoka  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
6th Author's Name Osamu Nakatsuka  
6th Author's Affiliation Nagoya University (Nagoya Univ.)
7th Author's Name Shigeaki Zaima  
7th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker
Date Time 2013-06-18 09:40:00 
Presentation Time 20 
Registration for SDM 
Paper # IEICE-SDM2013-46 
Volume (vol) IEICE-113 
Number (no) no.87 
Page pp.13-18 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2013-06-11 


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