Paper Abstract and Keywords |
Presentation |
2013-06-18 09:40
Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-46 Link to ES Tech. Rep. Archives: SDM2013-46 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Currently, it is reported that the Ge surface oxidation through the thin Al2O3 layer using oxygen plasma (post plasma oxidation) realizes a low interface state density (Dit) with the formation of the extremely thin GeOx interfacial layer. However, the reaction mechanism at the Al2O3/Ge interface with the post oxidation and the correlation between the interface structure and property have not been enough understood yet. In this study, we clarified the reaction mechanism of the post thermal oxidation of the Al2O3/Ge structure and discussed the correlation between the interface structure and property. The Al6Ge2O13 layer which is a stable AlGeO compound was preferentially formed near the Al2O3/Ge interface and the GeO2 layer was also formed on the Al2O3 surface with Ge or GeO diffusion into or through the Al2O3 layer. It is also found that the activation energy of the Al6Ge2O13 formation estimated to be 0.20 eV was lower than that of the GeO2 formation which is limited by the oxygen diffusion in the Al2O3 layer. Furthermore, it is found that Dit around the midgap of Ge decreases with the formation of the AlGeO near the Al2O3/Ge interface. Therefore, the formation of AlGeO near Al2O3/Ge interface is one of the important keys for further improvement of the interface property. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Al2O3/Ge / Thermal oxidation / Interface state density / AlGeO / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 87, SDM2013-46, pp. 13-18, June 2013. |
Paper # |
SDM2013-46 |
Date of Issue |
2013-06-11 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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SDM2013-46 Link to ES Tech. Rep. Archives: SDM2013-46 |
Conference Information |
Committee |
SDM |
Conference Date |
2013-06-18 - 2013-06-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Technology for Dielectric Thin Films for Electron Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2013-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties |
Sub Title (in English) |
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Keyword(1) |
Al2O3/Ge |
Keyword(2) |
Thermal oxidation |
Keyword(3) |
Interface state density |
Keyword(4) |
AlGeO |
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1st Author's Name |
Shigehisa Shibayama |
1st Author's Affiliation |
Nagoya University (Nagoya Univ.) |
2nd Author's Name |
Kimihiko Kato |
2nd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
3rd Author's Name |
Mitsuo Sakashita |
3rd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
4th Author's Name |
Wakana Takeuchi |
4th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
5th Author's Name |
Noriyuki Taoka |
5th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
6th Author's Name |
Osamu Nakatsuka |
6th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
7th Author's Name |
Shigeaki Zaima |
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Nagoya University (Nagoya Univ.) |
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Speaker |
Author-1 |
Date Time |
2013-06-18 09:40:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2013-46 |
Volume (vol) |
vol.113 |
Number (no) |
no.87 |
Page |
pp.13-18 |
#Pages |
6 |
Date of Issue |
2013-06-11 (SDM) |
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