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| Presentation | 2013-06-18 15:50 [Invited Lecture] Challenges of high-reliability in SiC-MOS gate structures Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura (AIST)  SDM2013-60 Link to ES Tech. Rep. Archives: SDM2013-60 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Influences of wafer-related defect and gate oxide fabrication process on MOS characteristics with gate oxides thermally grown on 4H-SiC wafer have been investigated for a realization of high-performance and high-reliable SiC-MOS power devices. The SiC-MOS characteristics depend on the gate oxide fabrication process, and are improved by the increase of DRY oxidation temperature and the applying of nitridation and hydrogen treatments. In addition, it was clearly shown that predominant origins of SiC-MOS reliability degradation are wafer-related defects such as dislocations and epitaxial surface defects. Moreover, the planarization of SiC epitaxial layer surface using a chemical mechanical polishing treatment is effective technique for the improvement of SiC-MOS reliability. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Silicon carbide / MOSFET / Thermal oxide / Channel mobility / Reliability / Dislocation / CMP / Surface roughness | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 87, SDM2013-60, pp. 81-86, June 2013. | |
| Paper # | SDM2013-60 | |
| Date of Issue | 2013-06-11 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2013-60 Link to ES Tech. Rep. Archives: SDM2013-60 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2013-06-18 - 2013-06-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technology for Dielectric Thin Films for Electron Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2013-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Challenges of high-reliability in SiC-MOS gate structures |
| Sub Title (in English) | |
| Keyword(1) | Silicon carbide |
| Keyword(2) | MOSFET |
| Keyword(3) | Thermal oxide |
| Keyword(4) | Channel mobility |
| Keyword(5) | Reliability |
| Keyword(6) | Dislocation |
| Keyword(7) | CMP |
| Keyword(8) | Surface roughness |
| 1st Author's Name | Junji Senzaki |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 2nd Author's Name | Atsushi Shimozato |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 3rd Author's Name | Yasunori Tanaka |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 4th Author's Name | Hajime Okumura |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
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| Speaker | Author-1 |
| Date Time | 2013-06-18 15:50:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2013-60 |
| Volume (vol) | vol.113 |
| Number (no) | no.87 |
| Page | pp.81-86 |
| #Pages | 6 |
| Date of Issue | 2013-06-11 (SDM) |
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