Paper Abstract and Keywords |
Presentation |
2013-06-18 16:45
[Invited Lecture]
An attempt for clarification of SiC oxidation mechanism
-- Common/different point to Si oxidation -- Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi (Saitama Univ.) SDM2013-62 Link to ES Tech. Rep. Archives: SDM2013-62 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Further understanding of the SiC oxidization mechanism is indispensable for MOSFET using a SiC semiconductor to exceed the conventional Si-based power devices. In this report, we summarize what have been found so far about the oxidization mechanism of SiC, and the research tendency and its subjects in recent years are introduced in terms of common or difference against Si oxidization. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
4H-SiC / Thermal oxide / MOSFET / SiO2/SiC interface / Interfacial Si emission model / Si and C emission phenomenon / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 87, SDM2013-62, pp. 91-96, June 2013. |
Paper # |
SDM2013-62 |
Date of Issue |
2013-06-11 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2013-62 Link to ES Tech. Rep. Archives: SDM2013-62 |
Conference Information |
Committee |
SDM |
Conference Date |
2013-06-18 - 2013-06-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Technology for Dielectric Thin Films for Electron Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2013-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
An attempt for clarification of SiC oxidation mechanism |
Sub Title (in English) |
Common/different point to Si oxidation |
Keyword(1) |
4H-SiC |
Keyword(2) |
Thermal oxide |
Keyword(3) |
MOSFET |
Keyword(4) |
SiO2/SiC interface |
Keyword(5) |
Interfacial Si emission model |
Keyword(6) |
Si and C emission phenomenon |
Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Yasuto Hijikata |
1st Author's Affiliation |
Saitama University (Saitama Univ.) |
2nd Author's Name |
Shuhei Yagi |
2nd Author's Affiliation |
Saitama University (Saitama Univ.) |
3rd Author's Name |
Hiroyuki Yaguchi |
3rd Author's Affiliation |
Saitama University (Saitama Univ.) |
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Speaker |
Author-1 |
Date Time |
2013-06-18 16:45:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2013-62 |
Volume (vol) |
vol.113 |
Number (no) |
no.87 |
Page |
pp.91-96 |
#Pages |
6 |
Date of Issue |
2013-06-11 (SDM) |