| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2013-06-18 11:15 Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks Chih-Yu Chang, Masafumi Yokoyama, Sang-Hyeon Kim (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo)  SDM2013-50 Link to ES Tech. Rep. Archives: SDM2013-50 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Electrical properties of Al2O3 and HfO2/InGaAs metal-oxide-semiconductor (MOS) capacitors with Al, Au and Pd gate electrodes have been evaluated in order to study the impact of metal gate electrodes on gate dielectrics and interface properties. It is found that MOS capacitors with Pd gate electrode can provide thinnest capacitance-equivalent-thickness (CET) and better HfO2/InGaAs MOS interfaces than those with Al and Au. However, the Al2O3/InGaAs interface properties are better in Au and Al gate electrodes than in Pd. Thus, the combination of high-k and gate metals must be carefully examined for realizing optimum gate stacks. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InGaAs / Metal gate electrodes / High-k dielectrics / Interface state density / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 87, SDM2013-50, pp. 33-37, June 2013. | |
| Paper # | SDM2013-50 | |
| Date of Issue | 2013-06-11 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2013-50 Link to ES Tech. Rep. Archives: SDM2013-50 |
|
| Conference Information | |
| Committee | SDM |
| Conference Date | 2013-06-18 - 2013-06-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technology for Dielectric Thin Films for Electron Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2013-06-SDM |
| Language | English (Japanese title is available) |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks |
| Sub Title (in English) | |
| Keyword(1) | InGaAs |
| Keyword(2) | Metal gate electrodes |
| Keyword(3) | High-k dielectrics |
| Keyword(4) | Interface state density |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Chih-Yu Chang |
| 1st Author's Affiliation | The University of Tokyo (Univ. of Tokyo) |
| 2nd Author's Name | Masafumi Yokoyama |
| 2nd Author's Affiliation | The University of Tokyo (Univ. of Tokyo) |
| 3rd Author's Name | Sang-Hyeon Kim |
| 3rd Author's Affiliation | The University of Tokyo (Univ. of Tokyo) |
| 4th Author's Name | Osamu Ichikawa |
| 4th Author's Affiliation | Sumitomo Chemical Corporation Ltd. (Sumitomo Chemical) |
| 5th Author's Name | Takenori Osada |
| 5th Author's Affiliation | Sumitomo Chemical Corporation Ltd. (Sumitomo Chemical) |
| 6th Author's Name | Masahiko Hata |
| 6th Author's Affiliation | Sumitomo Chemical Corporation Ltd. (Sumitomo Chemical) |
| 7th Author's Name | Mitsuru Takenaka |
| 7th Author's Affiliation | The University of Tokyo (Univ. of Tokyo) |
| 8th Author's Name | Shinichi Takagi |
| 8th Author's Affiliation | The University of Tokyo (Univ. of Tokyo) |
| 9th Author's Name | |
| 9th Author's Affiliation | () |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2013-06-18 11:15:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2013-50 |
| Volume (vol) | vol.113 |
| Number (no) | no.87 |
| Page | pp.33-37 |
| #Pages | 5 |
| Date of Issue | 2013-06-11 (SDM) |
[Return to Top Page]