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Paper Abstract and Keywords
Presentation 2013-06-18 15:10
[Invited Lecture] High performance of SiC-MOS devices by POCl3 annealing
Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-58 Link to ES Tech. Rep. Archives: SDM2013-58
Abstract (in Japanese) (See Japanese page) 
(in English) Effects of phosphorus incorporation by POCl3 annealing on electrical properties of 4H-SiC MOS devices were investigated. POCl3 annealing is more effective to reduce interface state density and improve channel mobility than the conventional NO annealing. C-V and I-V characteristics of MOS capacitors and MOSFETs and their stress tests are introduced.
Keyword (in Japanese) (See Japanese page) 
(in English) 4H-SiC / MOS / Interface trap / POCl3 anneal / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 87, SDM2013-58, pp. 71-76, June 2013.
Paper # SDM2013-58 
Date of Issue 2013-06-11 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2013-58 Link to ES Tech. Rep. Archives: SDM2013-58

Conference Information
Committee SDM  
Conference Date 2013-06-18 - 2013-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2013-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High performance of SiC-MOS devices by POCl3 annealing 
Sub Title (in English)  
Keyword(1) 4H-SiC  
Keyword(2) MOS  
Keyword(3) Interface trap  
Keyword(4) POCl3 anneal  
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1st Author's Name Hiroshi Yano  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Tomoaki Hatayama  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Takashi Fuyuki  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
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Speaker Author-1 
Date Time 2013-06-18 15:10:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2013-58 
Volume (vol) vol.113 
Number (no) no.87 
Page pp.71-76 
#Pages
Date of Issue 2013-06-11 (SDM) 


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