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| Presentation | 2013-06-18 10:35 Suppression of GeOx with rutile TiO2 Interlayer between HfO2 and Ge Kazuyoshi Kobashi (Meiji Univ.), Takahiro Nagata, Toshihide Nabatame, Yoshiyuki Yamashita (NIMS), Atsushi Ogura (Meiji Univ.), Toyohiro Chikyow (NIMS)  SDM2013-48 Link to ES Tech. Rep. Archives: SDM2013-48 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | As a alternative of Si channel, the Ge channel has been proposed and has attracted much attention because of high electron and hole mobility. However, the critical problem of Ge MOS devices is high defect densities at the interface of high-k/Ge structures. To overcome this problem, we investigated rutile TiO2 interlayer as a passivation layer. We fabricated rutile TiO2 interlayer between HfO2 and Ge, and found that the GeOx formation was effectively suppressed. Moreover the good electrical properties with EOT = 0.84 nm and small hysteresis were realized. These procedures would be one of the promising method for Ge MOS device. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Ge / High-k / MOS / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 87, SDM2013-48, pp. 25-28, June 2013. | |
| Paper # | SDM2013-48 | |
| Date of Issue | 2013-06-11 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2013-48 Link to ES Tech. Rep. Archives: SDM2013-48 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2013-06-18 - 2013-06-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technology for Dielectric Thin Films for Electron Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2013-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Suppression of GeOx with rutile TiO2 Interlayer between HfO2 and Ge |
| Sub Title (in English) | |
| Keyword(1) | Ge |
| Keyword(2) | High-k |
| Keyword(3) | MOS |
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| 1st Author's Name | Kazuyoshi Kobashi |
| 1st Author's Affiliation | Meiji University (Meiji Univ.) |
| 2nd Author's Name | Takahiro Nagata |
| 2nd Author's Affiliation | National Institute for material science (NIMS) |
| 3rd Author's Name | Toshihide Nabatame |
| 3rd Author's Affiliation | National Institute for material science (NIMS) |
| 4th Author's Name | Yoshiyuki Yamashita |
| 4th Author's Affiliation | National Institute for material science (NIMS) |
| 5th Author's Name | Atsushi Ogura |
| 5th Author's Affiliation | Meiji University (Meiji Univ.) |
| 6th Author's Name | Toyohiro Chikyow |
| 6th Author's Affiliation | National Institute for material science (NIMS) |
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| Speaker | Author-1 |
| Date Time | 2013-06-18 10:35:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2013-48 |
| Volume (vol) | vol.113 |
| Number (no) | no.87 |
| Page | pp.25-28 |
| #Pages | 4 |
| Date of Issue | 2013-06-11 (SDM) |
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