Paper Abstract and Keywords |
Presentation |
2013-05-16 13:30
Evaluation of carrier lifetime for 4H-SiC surfaces treated by various processes Yuto Mori, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2013-16 CPM2013-1 SDM2013-23 Link to ES Tech. Rep. Archives: ED2013-16 CPM2013-1 SDM2013-23 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
For very high voltage SiC bipolar devices, the carrier lifetime is an important parameter which influences the device performance. Observation of the surface recombination velocity is important in order to control the carrier lifetime. In this study, we show experimental data for the carrier lifetime in 4H-SiC whose surfaces were treated by various processes. As a result, we found that the reactive ion etching (RIE) decrease the carrier lifetime. We considered that point defects introduced by RIE influence the carrier lifetime. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
4H-SiC / キャリアライフタイム / 表面再結合 / μ-PCD / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 39, ED2013-16, pp. 1-6, May 2013. |
Paper # |
ED2013-16 |
Date of Issue |
2013-05-09 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2013-16 CPM2013-1 SDM2013-23 Link to ES Tech. Rep. Archives: ED2013-16 CPM2013-1 SDM2013-23 |
Conference Information |
Committee |
SDM ED CPM |
Conference Date |
2013-05-16 - 2013-05-17 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Crystal Growth, Characterization, Device, etc (compound semiconductors, Si, SiGe, optical and electronic materials) |
Paper Information |
Registration To |
ED |
Conference Code |
2013-05-SDM-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Evaluation of carrier lifetime for 4H-SiC surfaces treated by various processes |
Sub Title (in English) |
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Keyword(1) |
4H-SiC |
Keyword(2) |
キャリアライフタイム |
Keyword(3) |
表面再結合 |
Keyword(4) |
μ-PCD |
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1st Author's Name |
Yuto Mori |
1st Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
2nd Author's Name |
Masashi Kato |
2nd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
3rd Author's Name |
Masaya Ichimura |
3rd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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Speaker |
Author-1 |
Date Time |
2013-05-16 13:30:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2013-16, CPM2013-1, SDM2013-23 |
Volume (vol) |
vol.113 |
Number (no) |
no.39(ED), no.40(CPM), no.41(SDM) |
Page |
pp.1-6 |
#Pages |
6 |
Date of Issue |
2013-05-09 (ED, CPM, SDM) |
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