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Paper Abstract and Keywords
Presentation 2013-05-16 13:55
Identification of defect structures forming the deep levels in 4H-SiC
Hiroki Nakane, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Takeshi Ohshima (JAEA) ED2013-17 CPM2013-2 SDM2013-24 Link to ES Tech. Rep. Archives: ED2013-17 CPM2013-2 SDM2013-24
Abstract (in Japanese) (See Japanese page) 
(in English) (Available after conference date)
Keyword (in Japanese) (See Japanese page) 
(in English) / / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 39, ED2013-17, pp. 7-12, May 2013.
Paper # ED2013-17 
Date of Issue 2013-05-09 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-17 CPM2013-2 SDM2013-24 Link to ES Tech. Rep. Archives: ED2013-17 CPM2013-2 SDM2013-24

Conference Information
Committee SDM ED CPM  
Conference Date 2013-05-16 - 2013-05-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal Growth, Characterization, Device, etc (compound semiconductors, Si, SiGe, optical and electronic materials) 
Paper Information
Registration To ED 
Conference Code 2013-05-SDM-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Identification of defect structures forming the deep levels in 4H-SiC 
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1st Author's Name Hiroki Nakane  
1st Author's Affiliation Nagoya Institute of technology (Nagoya Inst. of Tech.)
2nd Author's Name Masashi Kato  
2nd Author's Affiliation Nagoya Institute of technology (Nagoya Inst. of Tech.)
3rd Author's Name Masaya Ichimura  
3rd Author's Affiliation Nagoya Institute of technology (Nagoya Inst. of Tech.)
4th Author's Name Takeshi Ohshima  
4th Author's Affiliation Japan Atomic Energy Agency (JAEA)
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Speaker
Date Time 2013-05-16 13:55:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2013-17,IEICE-CPM2013-2,IEICE-SDM2013-24 
Volume (vol) IEICE-113 
Number (no) no.39(ED), no.40(CPM), no.41(SDM) 
Page pp.7-12 
#Pages IEICE-6 
Date of Issue IEICE-ED-2013-05-09,IEICE-CPM-2013-05-09,IEICE-SDM-2013-05-09 


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