Paper Abstract and Keywords |
Presentation |
2013-05-16 16:35
Focused ion beam Ga implantation into P-doped SOI layer and its Seebeck coefficient Yuhei Suzuki, Kazutoshi Miwa (Shizuoka Univ.), Faiz Salleh (Shizuoka Univ./ Research Fellow of JSPS), Masaru Shimomura, Akihiro Ishida, Hiroya Ikeda (Shizuoka Univ.) ED2013-22 CPM2013-7 SDM2013-29 Link to ES Tech. Rep. Archives: ED2013-22 CPM2013-7 SDM2013-29 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
With the aim of fabricating a thermopile infrared detector using Si nanowires, we have investigated the formation of a p-type silicon-on-insulator (SOI) layer by focused ion beam (FIB) Ga implantation into a P-doped SOI layer.
In this study, the Ga-implanted SOI layers with an average Ga concentration of $3 times 10^{18}$cm$^{-3}$ and $3 times 10^{19}$cm$^{-3}$ were prepared and their Seebeck coefficients were measured.
It was found that the sign of thermoelectromotive force of the Ga-implanted SOI layer was reversed from the original P-doped SOI layer.
Therfore, the p-type SOI layer was formed by the Ga implantation.
The measured Seebeck coefficient was found not to be reproduced by the theoretically calculated value of co-doped Si.
This disagreement is thought to be due to the influence of Ga ion distribution in the implanted SOI layer. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
thermopile IR photodetector / Si nanowire / Seebeck coefficient / focused ion beam / ion implantation / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 41, SDM2013-29, pp. 33-37, May 2013. |
Paper # |
SDM2013-29 |
Date of Issue |
2013-05-09 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2013-22 CPM2013-7 SDM2013-29 Link to ES Tech. Rep. Archives: ED2013-22 CPM2013-7 SDM2013-29 |
Conference Information |
Committee |
SDM ED CPM |
Conference Date |
2013-05-16 - 2013-05-17 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Crystal Growth, Characterization, Device, etc (compound semiconductors, Si, SiGe, optical and electronic materials) |
Paper Information |
Registration To |
SDM |
Conference Code |
2013-05-SDM-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Focused ion beam Ga implantation into P-doped SOI layer and its Seebeck coefficient |
Sub Title (in English) |
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Keyword(1) |
thermopile IR photodetector |
Keyword(2) |
Si nanowire |
Keyword(3) |
Seebeck coefficient |
Keyword(4) |
focused ion beam |
Keyword(5) |
ion implantation |
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1st Author's Name |
Yuhei Suzuki |
1st Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
2nd Author's Name |
Kazutoshi Miwa |
2nd Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
3rd Author's Name |
Faiz Salleh |
3rd Author's Affiliation |
Shizuoka University/ Research Fellow of the Japan Society for the Promotion of Science (Shizuoka Univ./ Research Fellow of JSPS) |
4th Author's Name |
Masaru Shimomura |
4th Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
5th Author's Name |
Akihiro Ishida |
5th Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
6th Author's Name |
Hiroya Ikeda |
6th Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
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Speaker |
Author-1 |
Date Time |
2013-05-16 16:35:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
ED2013-22, CPM2013-7, SDM2013-29 |
Volume (vol) |
vol.113 |
Number (no) |
no.39(ED), no.40(CPM), no.41(SDM) |
Page |
pp.33-37 |
#Pages |
5 |
Date of Issue |
2013-05-09 (ED, CPM, SDM) |
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