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Paper Abstract and Keywords
Presentation 2013-05-16 16:35
Focused ion beam Ga implantation into P-doped SOI layer and its Seebeck coefficient
Yuhei Suzuki, Kazutoshi Miwa (Shizuoka Univ.), Faiz Salleh (Shizuoka Univ./ Research Fellow of JSPS), Masaru Shimomura, Akihiro Ishida, Hiroya Ikeda (Shizuoka Univ.) ED2013-22 CPM2013-7 SDM2013-29 Link to ES Tech. Rep. Archives: ED2013-22 CPM2013-7 SDM2013-29
Abstract (in Japanese) (See Japanese page) 
(in English) With the aim of fabricating a thermopile infrared detector using Si nanowires, we have investigated the formation of a p-type silicon-on-insulator (SOI) layer by focused ion beam (FIB) Ga implantation into a P-doped SOI layer.
In this study, the Ga-implanted SOI layers with an average Ga concentration of $3 times 10^{18}$cm$^{-3}$ and $3 times 10^{19}$cm$^{-3}$ were prepared and their Seebeck coefficients were measured.
It was found that the sign of thermoelectromotive force of the Ga-implanted SOI layer was reversed from the original P-doped SOI layer.
Therfore, the p-type SOI layer was formed by the Ga implantation.
The measured Seebeck coefficient was found not to be reproduced by the theoretically calculated value of co-doped Si.
This disagreement is thought to be due to the influence of Ga ion distribution in the implanted SOI layer.
Keyword (in Japanese) (See Japanese page) 
(in English) thermopile IR photodetector / Si nanowire / Seebeck coefficient / focused ion beam / ion implantation / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 41, SDM2013-29, pp. 33-37, May 2013.
Paper # SDM2013-29 
Date of Issue 2013-05-09 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2013-22 CPM2013-7 SDM2013-29 Link to ES Tech. Rep. Archives: ED2013-22 CPM2013-7 SDM2013-29

Conference Information
Committee SDM ED CPM  
Conference Date 2013-05-16 - 2013-05-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal Growth, Characterization, Device, etc (compound semiconductors, Si, SiGe, optical and electronic materials) 
Paper Information
Registration To SDM 
Conference Code 2013-05-SDM-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Focused ion beam Ga implantation into P-doped SOI layer and its Seebeck coefficient 
Sub Title (in English)  
Keyword(1) thermopile IR photodetector  
Keyword(2) Si nanowire  
Keyword(3) Seebeck coefficient  
Keyword(4) focused ion beam  
Keyword(5) ion implantation  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yuhei Suzuki  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Kazutoshi Miwa  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Faiz Salleh  
3rd Author's Affiliation Shizuoka University/ Research Fellow of the Japan Society for the Promotion of Science (Shizuoka Univ./ Research Fellow of JSPS)
4th Author's Name Masaru Shimomura  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
5th Author's Name Akihiro Ishida  
5th Author's Affiliation Shizuoka University (Shizuoka Univ.)
6th Author's Name Hiroya Ikeda  
6th Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Speaker Author-1 
Date Time 2013-05-16 16:35:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2013-22, CPM2013-7, SDM2013-29 
Volume (vol) vol.113 
Number (no) no.39(ED), no.40(CPM), no.41(SDM) 
Page pp.33-37 
#Pages
Date of Issue 2013-05-09 (ED, CPM, SDM) 


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