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| Presentation | 2013-04-12 15:30 [Invited Lecture] Reduction of SRAM Standby Leakage utlizing All Digital Current Comparator Noriaki Maeda, Shigenobu Komatsu, Masao Morimoto, Koji Tanaka, Yasumasa Tsukamoto, Koji Nii, Yasuhisa Shimazaki (Renesas Electronics)  ICD2013-21 Link to ES Tech. Rep. Archives: ICD2013-21 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A high-performance and low-leakage current embedded SRAM for mobile phones is proposed. The proposed SRAM has two low-voltage resume-standby modes to reduce the standby leakage. An all digital current comparator is also proposed to choose a suitable standby mode. A test chip was fabricated using 28 nm HKMG CMOS technology. The proposed 32 Kb SRAM achieves 0.41 μA standby leakage which is half of the conventional value, with 420 ps access. Keyword 28nm, SRAM, Power Gating，Low-leakage current, Retention, Current Comparator. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | 28nm / SRAM / Power Gating / Low-leakage current / Retention / Current Comparator / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 1, ICD2013-21, pp. 109-114, April 2013. | |
| Paper # | ICD2013-21 | |
| Date of Issue | 2013-04-04 (ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ICD2013-21 Link to ES Tech. Rep. Archives: ICD2013-21 |
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| Conference Information | |
| Committee | ICD |
| Conference Date | 2013-04-11 - 2013-04-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Advanced Industrial Science and Technology (AIST) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Memory Device Technologies |
| Paper Information | |
| Registration To | ICD |
| Conference Code | 2013-04-ICD |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reduction of SRAM Standby Leakage utlizing All Digital Current Comparator |
| Sub Title (in English) | |
| Keyword(1) | 28nm |
| Keyword(2) | SRAM |
| Keyword(3) | Power Gating |
| Keyword(4) | Low-leakage current |
| Keyword(5) | Retention |
| Keyword(6) | Current Comparator |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Noriaki Maeda |
| 1st Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 2nd Author's Name | Shigenobu Komatsu |
| 2nd Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 3rd Author's Name | Masao Morimoto |
| 3rd Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 4th Author's Name | Koji Tanaka |
| 4th Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 5th Author's Name | Yasumasa Tsukamoto |
| 5th Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 6th Author's Name | Koji Nii |
| 6th Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 7th Author's Name | Yasuhisa Shimazaki |
| 7th Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
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| Speaker | Author-1 |
| Date Time | 2013-04-12 15:30:00 |
| Presentation Time | 25 minutes |
| Registration for | ICD |
| Paper # | ICD2013-21 |
| Volume (vol) | vol.113 |
| Number (no) | no.1 |
| Page | pp.109-114 |
| #Pages | 6 |
| Date of Issue | 2013-04-04 (ICD) |
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