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| Presentation | 2013-04-11 14:45 [Invited Lecture] Fabrication of a Nonvolatile TCAM Chip Based on 4T-2MTJ Cell Structure Shoun Matsunaga (Tohoku Univ.), Sadahiko Miura, Hiroaki Honjo (NEC), Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu (Tohoku Univ.)  ICD2013-7 Link to ES Tech. Rep. Archives: ICD2013-7 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Higher density and lower standby power are demanded in ternary content-addressable memory (TCAM), that realizes huge number of information retrieval at a time with its fully parallel manner. In this paper, we propose and demonstrate a four-MOS-transistor/two-MTJ-device (4T-2MTJ) cell circuit for a standby-power-free and high-density fully parallel nonvolatile TCAM. By optimally merging a nonvolatile storage function and a comparison logic function into the TCAM cell circuit with nonvolatile logic-in-memory structure, the transistor counts required in the cell circuit become minimized. As a result, the cell size becomes 3.14 $\mu m^2$ under a 90-nm CMOS and a 100-nm MTJ technologies. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Nonvolatile / spintronics / standby power / fully parallel / associative memory / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 1, ICD2013-7, pp. 33-38, April 2013. | |
| Paper # | ICD2013-7 | |
| Date of Issue | 2013-04-04 (ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ICD2013-7 Link to ES Tech. Rep. Archives: ICD2013-7 |
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| Conference Information | |
| Committee | ICD |
| Conference Date | 2013-04-11 - 2013-04-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Advanced Industrial Science and Technology (AIST) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Memory Device Technologies |
| Paper Information | |
| Registration To | ICD |
| Conference Code | 2013-04-ICD |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of a Nonvolatile TCAM Chip Based on 4T-2MTJ Cell Structure |
| Sub Title (in English) | |
| Keyword(1) | Nonvolatile |
| Keyword(2) | spintronics |
| Keyword(3) | standby power |
| Keyword(4) | fully parallel |
| Keyword(5) | associative memory |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shoun Matsunaga |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Sadahiko Miura |
| 2nd Author's Affiliation | NEC Corporation (NEC) |
| 3rd Author's Name | Hiroaki Honjo |
| 3rd Author's Affiliation | NEC Corporation (NEC) |
| 4th Author's Name | Keizo Kinoshita |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Shoji Ikeda |
| 5th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 6th Author's Name | Tetsuo Endoh |
| 6th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 7th Author's Name | Hideo Ohno |
| 7th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 8th Author's Name | Takahiro Hanyu |
| 8th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2013-04-11 14:45:00 |
| Presentation Time | 25 minutes |
| Registration for | ICD |
| Paper # | ICD2013-7 |
| Volume (vol) | vol.113 |
| Number (no) | no.1 |
| Page | pp.33-38 |
| #Pages | 6 |
| Date of Issue | 2013-04-04 (ICD) |
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