Paper Abstract and Keywords |
Presentation |
2013-03-08 11:45
Nano Artifact-metrics based on Resist Collapsing Tsutomu Matsumoto, Kenta Hanaki, Ryosuke Suzuki, Daiki Sekiguchi (Yokohama National Univ.), Morihisa Hoga, Yasuyuki Ohyagi (DNP), Makoto Naruse (NICT), Naoya Tate, Motoichi Ohtsu (Univ. of Tokyo) IT2012-96 ISEC2012-114 WBS2012-82 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Artifact-metrics is an automated method of utilizing physical artifacts based on their measurable intrinsic characteristics such as microscopic random-patterns and the like which are inherently emerging in their manufacturing process. This article reports a brand-new proposal of nanometer scale artifact-metrics in which a random nanostructure based on collapsing of electron-beam resist pillars is processed by a system adopting a critical-dimension scanning electron microscope. The nano articaft-metric system is expected to be resistant against cloning attacks including counterfeit with pattern forming by electron beam lithography. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
information and physical security / artifact-metrics / clone-resistance / electron beam lithography / resist collapsing / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 461, ISEC2012-114, pp. 217-222, March 2013. |
Paper # |
ISEC2012-114 |
Date of Issue |
2013-02-28 (IT, ISEC, WBS) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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IT2012-96 ISEC2012-114 WBS2012-82 |
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