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| Presentation | 2013-02-27 16:55 Al2O3/InSb MOSFETs using an ultra thin InSb layer grown directly on a Si substrate Koichi Maezawa, Taihei Ito, Azusa Kadoda, Koji Nakayama, Yuichiro Yasui, Masayuki Mori (Univ. of Toyama), Eiji Miyazaki, Takashi Mizutani (Nagoya Univ.)  ED2012-135 SDM2012-164 Link to ES Tech. Rep. Archives: ED2012-135 SDM2012-164 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Al2O3/InSb/Si MOSFETs were fabricated with a thin InSb channel layer grown directly on Si(111) substrates. The InSb thickness was ranging from 6 to 25 nm. These thicknesses are close to the critical thickness of the InSb on Si, when the InSb layer is grown using special technique called surface reconstruction controlled epitaxy, which reduces the lattice mismatch from 19.3 to 3.3 % by rotating the in-plane InSb axis by 30-degrees with respect to the Si(111) substrate. Good FET characteristics were observed for 10-nm InSb channel devices. The dependence of the device properties on the InSb channel thickness were investigated. The enhancement of the effective mobility for thin InSb channel devices was demonstrated, which indicates the crystal quality improvement for quasi pseudomorphic channels. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | MOSFET / InSb / Al2O3 / Molecular Beam Epitaxy / lattice mismatch / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 445, ED2012-135, pp. 39-42, Feb. 2013. | |
| Paper # | ED2012-135 | |
| Date of Issue | 2013-02-20 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2012-135 SDM2012-164 Link to ES Tech. Rep. Archives: ED2012-135 SDM2012-164 |
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| Conference Information | |
| Committee | SDM ED |
| Conference Date | 2013-02-27 - 2013-02-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional nanodevices and related technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2013-02-SDM-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Al2O3/InSb MOSFETs using an ultra thin InSb layer grown directly on a Si substrate |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | InSb |
| Keyword(3) | Al2O3 |
| Keyword(4) | Molecular Beam Epitaxy |
| Keyword(5) | lattice mismatch |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Koichi Maezawa |
| 1st Author's Affiliation | University of Toyama (Univ. of Toyama) |
| 2nd Author's Name | Taihei Ito |
| 2nd Author's Affiliation | University of Toyama (Univ. of Toyama) |
| 3rd Author's Name | Azusa Kadoda |
| 3rd Author's Affiliation | University of Toyama (Univ. of Toyama) |
| 4th Author's Name | Koji Nakayama |
| 4th Author's Affiliation | University of Toyama (Univ. of Toyama) |
| 5th Author's Name | Yuichiro Yasui |
| 5th Author's Affiliation | University of Toyama (Univ. of Toyama) |
| 6th Author's Name | Masayuki Mori |
| 6th Author's Affiliation | University of Toyama (Univ. of Toyama) |
| 7th Author's Name | Eiji Miyazaki |
| 7th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 8th Author's Name | Takashi Mizutani |
| 8th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2013-02-27 16:55:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2012-135, SDM2012-164 |
| Volume (vol) | vol.112 |
| Number (no) | no.445(ED), no.446(SDM) |
| Page | pp.39-42 |
| #Pages | 4 |
| Date of Issue | 2013-02-20 (ED, SDM) |
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