Paper Abstract and Keywords |
Presentation |
2013-02-04 13:50
Nano-ordered Evaluation for Local Distribution of Adhesion Strength Between Cu/Dielectric in LSI Circuit S.Kamiya, Hisashi Sato (Nagoya Inst. of Tech.), Masaki Omiya (Keio Univ.), Nobuyuki Shishido, Kozo Koiwa, Masahiro Nishida (Nagoya Inst. of Tech.), Tomoji Nakamura, Takashi Suzuki (Fujitsu Labs), Takeshi Nokuo, Toshiaki Suzuki (JEOL) SDM2012-153 Link to ES Tech. Rep. Archives: SDM2012-153 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
One of serious problems for LSI is the weakness of interfaces in Cu/dielectric systems along with the trend of further miniaturization. Although adhesion strength of those interfaces is previously evaluated by macroscopic tests such as four point bending, the local interface adhesion strength in recent LSI with very fine structures is influenced by the local microstructure of Cu lines. This is because that crystal orientation, high angle grain boundaries and twins influence on the local deformation. In this study, novel evaluation method for the local adhesion interface-strength of the Cu/dielectric interface on the sub-micron Cu damascene is proposed. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
LSI circuit / Cu damascene / Cu/dielectric interface / Local adhesion strength / crystal orientation / grain boundary / plastic deformation / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 427, SDM2012-153, pp. 15-20, Feb. 2013. |
Paper # |
SDM2012-153 |
Date of Issue |
2013-01-28 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2012-153 Link to ES Tech. Rep. Archives: SDM2012-153 |
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