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Paper Abstract and Keywords
Presentation 2013-01-25 10:15
Development of scale down testbed for high voltage power device
Takashi Matsuyoshi (KIT), Msanori Tsukuda (ICSEAD/KIT), Hidetoshi Hirai, Ichiro Omura (KIT) EE2012-46 CPM2012-168 Link to ES Tech. Rep. Archives: CPM2012-168
Abstract (in Japanese) (See Japanese page) 
(in English) The testbed for high voltage power device evaluation was developed. This testbed is constituted by special device package, aluminum block, etc., and realizes a super-low stray inductance. Moreover, ideal switching property evaluation became possible by using this testbed. This testbed is used for measurement of the ultimate performance of a power device, construction of a compact model and the advancement of the gate drive.
Keyword (in Japanese) (See Japanese page) 
(in English) testbed / press-pack / high voltage power device / stray inductance / stray capacitance / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 396, EE2012-46, pp. 105-109, Jan. 2013.
Paper # EE2012-46 
Date of Issue 2013-01-17 (EE, CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EE2012-46 CPM2012-168 Link to ES Tech. Rep. Archives: CPM2012-168

Conference Information
Committee EE CPM  
Conference Date 2013-01-24 - 2013-01-25 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To EE 
Conference Code 2013-01-EE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of scale down testbed for high voltage power device 
Sub Title (in English)  
Keyword(1) testbed  
Keyword(2) press-pack  
Keyword(3) high voltage power device  
Keyword(4) stray inductance  
Keyword(5) stray capacitance  
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Keyword(8)  
1st Author's Name Takashi Matsuyoshi  
1st Author's Affiliation Kyushu Inst. of Technology (KIT)
2nd Author's Name Msanori Tsukuda  
2nd Author's Affiliation The Int'l Center for the Study of East Asian dev./Kyushu Inst. of Technology (ICSEAD/KIT)
3rd Author's Name Hidetoshi Hirai  
3rd Author's Affiliation Kyushu Inst. of Technology (KIT)
4th Author's Name Ichiro Omura  
4th Author's Affiliation Kyushu Inst. of Technology (KIT)
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Speaker Author-1 
Date Time 2013-01-25 10:15:00 
Presentation Time 25 minutes 
Registration for EE 
Paper # EE2012-46, CPM2012-168 
Volume (vol) vol.112 
Number (no) no.396(EE), no.397(CPM) 
Page pp.105-109 
#Pages
Date of Issue 2013-01-17 (EE, CPM) 


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