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| Presentation | 2013-01-18 14:30 Analysis of drain leakage current in AlGaN/GaN HEMT Kazuo Hayashi, Toshiyuki Oishi, Yoshitaka Kamo, Yutaro Yamaguchi, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Mitsubishi Electric Corp.), Yasuyuki Miyamoto (Tokyo Institute of Technology)  ED2012-125 MW2012-155 Link to ES Tech. Rep. Archives: ED2012-125 MW2012-155 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Traps in GaN layer of AlGaN/GaN HEMTs have been studied by using both experimental data and TCAD simulation. Two traps with activation energies of 0.15 and 0.5 eV are estimated from drain current versus drain voltage curves below pinch-off voltage at various temperatures. Furthermore, the drain leakage current is found to decrease as the trap density increases. From TCAD simulation, the decrease of the drain leakage current results from the increase of conduction band due to the traps with negative charges in GaN layer. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN/GaN HEMT / trap / TCAD simulation / drain leakage current / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 380, ED2012-125, pp. 69-74, Jan. 2013. | |
| Paper # | ED2012-125 | |
| Date of Issue | 2013-01-10 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2012-125 MW2012-155 Link to ES Tech. Rep. Archives: ED2012-125 MW2012-155 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2013-01-17 - 2013-01-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC, High-speed and high-frequency devices, Microwave Technologies, etc. |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2013-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of drain leakage current in AlGaN/GaN HEMT |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HEMT |
| Keyword(2) | trap |
| Keyword(3) | TCAD simulation |
| Keyword(4) | drain leakage current |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kazuo Hayashi |
| 1st Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 2nd Author's Name | Toshiyuki Oishi |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 3rd Author's Name | Yoshitaka Kamo |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 4th Author's Name | Yutaro Yamaguchi |
| 4th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 5th Author's Name | Hiroshi Otsuka |
| 5th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 6th Author's Name | Koji Yamanaka |
| 6th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 7th Author's Name | Masatoshi Nakayama |
| 7th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 8th Author's Name | Yasuyuki Miyamoto |
| 8th Author's Affiliation | Tokyo Institute of Technology (Tokyo Institute of Technology) |
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| Speaker | Author-1 |
| Date Time | 2013-01-18 14:30:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2012-125, MW2012-155 |
| Volume (vol) | vol.112 |
| Number (no) | no.380(ED), no.381(MW) |
| Page | pp.69-74 |
| #Pages | 6 |
| Date of Issue | 2013-01-10 (ED, MW) |
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