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Paper Abstract and Keywords
Presentation 2013-01-16 17:00
Dynamic Multi-Vth Control Using Body Biasing in Silicon on Thin Buried Oxide (SOTB)
Shinya Ajiro, Masaru Kudo, Kimiyoshi Usami (Shibaura Inst. of Tech.) VLD2012-120 CPSY2012-69 RECONF2012-74
Abstract (in Japanese) (See Japanese page) 
(in English) Silicon on thin BOX(SOTB) is an FD-SOI device being possible to operate with ultra-low voltage of 0.4V and greatly change the threshold voltage of a transistor by body biasing. In this research, we propose a design technique that realizes multi-vth using body biasing. In this technique, after designing the circuit which consists of only high threshold transistors, the threshold voltage is lowered only at the area which needs high-speed operation by applying body bias. Results of applying the proposed technique to 32bit adder design showed that leakage power can be reduced by approximately 43% without increasing delay time compared with the circuit with only normal threshold voltage.
Keyword (in Japanese) (See Japanese page) 
(in English) SOI / Thin BOX / Body Bias / Multi-Vth / Leakage Power / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 375, VLD2012-120, pp. 75-80, Jan. 2013.
Paper # VLD2012-120 
Date of Issue 2013-01-09 (VLD, CPSY, RECONF) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF VLD2012-120 CPSY2012-69 RECONF2012-74

Conference Information
Conference Date 2013-01-16 - 2013-01-17 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To VLD 
Conference Code 2013-01-CPSY-VLD-RECONF-SLDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Dynamic Multi-Vth Control Using Body Biasing in Silicon on Thin Buried Oxide (SOTB) 
Sub Title (in English)  
Keyword(1) SOI  
Keyword(2) Thin BOX  
Keyword(3) Body Bias  
Keyword(4) Multi-Vth  
Keyword(5) Leakage Power  
1st Author's Name Shinya Ajiro  
1st Author's Affiliation Shibaura Institute of Technology (Shibaura Inst. of Tech.)
2nd Author's Name Masaru Kudo  
2nd Author's Affiliation Shibaura Institute of Technology (Shibaura Inst. of Tech.)
3rd Author's Name Kimiyoshi Usami  
3rd Author's Affiliation Shibaura Institute of Technology (Shibaura Inst. of Tech.)
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Date Time 2013-01-16 17:00:00 
Presentation Time 25 
Registration for VLD 
Paper # IEICE-VLD2012-120,IEICE-CPSY2012-69,IEICE-RECONF2012-74 
Volume (vol) IEICE-112 
Number (no) no.375(VLD), no.376(CPSY), no.377(RECONF) 
Page pp.75-80 
#Pages IEICE-6 
Date of Issue IEICE-VLD-2013-01-09,IEICE-CPSY-2013-01-09,IEICE-RECONF-2013-01-09 

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