Paper Abstract and Keywords |
Presentation |
2012-12-21 16:45
Characteristics of InP-based passive devices of Si substrate with BCB adhesive wafer bonding for on-chip interconnects Jieun Lee, Yoshiaki Yamahara, Yuki Atsumi, Nobuhiko Nishiyama (TiTech), Shigehisa Arai (TiTech/QNERC) OPE2012-141 Link to ES Tech. Rep. Archives: OPE2012-141 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
For InP-based membrane photonic circuits on Si-LSI, a GaInAsP wire waveguide and basic functional passive devices based on the GaInAsP wire structure were designed, fabricated, and characterized. The relationship between the sidewall roughness and the propagation loss was clarified and the technic for loss reduction was verified by improved fabrication process of GaInAsP waveguide with an electron-beam lithography and inductively-coupled-plasma reactive ion etching on Si substrate by BCB bonding. As a result, the propagation loss was obtained as low as 4 dB/cm which is the best record as an InP-based wire waveguide on Si substrate. Also a multi-mode interferometer (MMI) as a 3dB optical beam splitter was designed and fabricated with wire waveguide. In addition, for membrane PICs the coupling losses were calculated between membrane laser and GaInAsP wire waveguide caused by deference of optical mode fields, and the taper-type optical mode converter was designed to improve the coupling efficiency to 99% between those devices. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Membrane photonic circuits / BCB adhesive wafer bonding / GaInAsP wire waveguide / MMI splitter / Optical mode converter / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 371, OPE2012-141, pp. 39-44, Dec. 2012. |
Paper # |
OPE2012-141 |
Date of Issue |
2012-12-14 (OPE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
OPE2012-141 Link to ES Tech. Rep. Archives: OPE2012-141 |
Conference Information |
Committee |
OPE |
Conference Date |
2012-12-21 - 2012-12-21 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
OPE |
Conference Code |
2012-12-OPE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Characteristics of InP-based passive devices of Si substrate with BCB adhesive wafer bonding for on-chip interconnects |
Sub Title (in English) |
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Keyword(1) |
Membrane photonic circuits |
Keyword(2) |
BCB adhesive wafer bonding |
Keyword(3) |
GaInAsP wire waveguide |
Keyword(4) |
MMI splitter |
Keyword(5) |
Optical mode converter |
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1st Author's Name |
Jieun Lee |
1st Author's Affiliation |
Tokyo Institute of Technology (TiTech) |
2nd Author's Name |
Yoshiaki Yamahara |
2nd Author's Affiliation |
Tokyo Institute of Technology (TiTech) |
3rd Author's Name |
Yuki Atsumi |
3rd Author's Affiliation |
Tokyo Institute of Technology (TiTech) |
4th Author's Name |
Nobuhiko Nishiyama |
4th Author's Affiliation |
Tokyo Institute of Technology (TiTech) |
5th Author's Name |
Shigehisa Arai |
5th Author's Affiliation |
Tokyo Institute of Technology/Quantum Nanoelectronics Research Center (TiTech/QNERC) |
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Speaker |
Author-1 |
Date Time |
2012-12-21 16:45:00 |
Presentation Time |
25 minutes |
Registration for |
OPE |
Paper # |
OPE2012-141 |
Volume (vol) |
vol.112 |
Number (no) |
no.371 |
Page |
pp.39-44 |
#Pages |
6 |
Date of Issue |
2012-12-14 (OPE) |