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Paper Abstract and Keywords
Presentation 2012-12-21 16:45
Characteristics of InP-based passive devices of Si substrate with BCB adhesive wafer bonding for on-chip interconnects
Jieun Lee, Yoshiaki Yamahara, Yuki Atsumi, Nobuhiko Nishiyama (TiTech), Shigehisa Arai (TiTech/QNERC) Link to ES Tech. Rep. Archives: OPE2012-141
Abstract (in Japanese) (See Japanese page) 
(in English) For InP-based membrane photonic circuits on Si-LSI, a GaInAsP wire waveguide and basic functional passive devices based on the GaInAsP wire structure were designed, fabricated, and characterized. The relationship between the sidewall roughness and the propagation loss was clarified and the technic for loss reduction was verified by improved fabrication process of GaInAsP waveguide with an electron-beam lithography and inductively-coupled-plasma reactive ion etching on Si substrate by BCB bonding. As a result, the propagation loss was obtained as low as 4 dB/cm which is the best record as an InP-based wire waveguide on Si substrate. Also a multi-mode interferometer (MMI) as a 3dB optical beam splitter was designed and fabricated with wire waveguide. In addition, for membrane PICs the coupling losses were calculated between membrane laser and GaInAsP wire waveguide caused by deference of optical mode fields, and the taper-type optical mode converter was designed to improve the coupling efficiency to 99% between those devices.
Keyword (in Japanese) (See Japanese page) 
(in English) Membrane photonic circuits / BCB adhesive wafer bonding / GaInAsP wire waveguide / MMI splitter / Optical mode converter / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 371, OPE2012-141, pp. 39-44, Dec. 2012.
Paper # OPE2012-141 
Date of Issue 2012-12-14 (OPE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Conference Information
Committee OPE  
Conference Date 2012-12-21 - 2012-12-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To OPE 
Conference Code 2012-12-OPE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characteristics of InP-based passive devices of Si substrate with BCB adhesive wafer bonding for on-chip interconnects 
Sub Title (in English)  
Keyword(1) Membrane photonic circuits  
Keyword(2) BCB adhesive wafer bonding  
Keyword(3) GaInAsP wire waveguide  
Keyword(4) MMI splitter  
Keyword(5) Optical mode converter  
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1st Author's Name Jieun Lee  
1st Author's Affiliation Tokyo Institute of Technology (TiTech)
2nd Author's Name Yoshiaki Yamahara  
2nd Author's Affiliation Tokyo Institute of Technology (TiTech)
3rd Author's Name Yuki Atsumi  
3rd Author's Affiliation Tokyo Institute of Technology (TiTech)
4th Author's Name Nobuhiko Nishiyama  
4th Author's Affiliation Tokyo Institute of Technology (TiTech)
5th Author's Name Shigehisa Arai  
5th Author's Affiliation Tokyo Institute of Technology/Quantum Nanoelectronics Research Center (TiTech/QNERC)
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Speaker
Date Time 2012-12-21 16:45:00 
Presentation Time 25 
Registration for OPE 
Paper # IEICE-OPE2012-141 
Volume (vol) IEICE-112 
Number (no) no.371 
Page pp.39-44 
#Pages IEICE-6 
Date of Issue IEICE-OPE-2012-12-14 


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