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| Presentation | 2012-12-18 10:50 Frequency increase in terahertz oscillation of resonant tunneling diodes by thin and deep quantum wells Hidetoshi Kanaya, Riku Sogabe, Safumi Suzuki, Masahiro Asada (Tokyo Tech.)  ED2012-104 Link to ES Tech. Rep. Archives: ED2012-104 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We report on the increase in frequency for terahertz (THz) oscillating AlAs/InGaAs resonant tunneling diodes (RTDs) with deep and thin wells while the bias voltage is maintained. Although increases in oscillation frequency and output power have been obtained for thin-well RTDs through a decrease in dwell time at resonant tunneling region, this causes an increase in bias voltage. We introduce indium-rich InGaAs into the well material to maintain or even to reduce the bias voltage due to depression of the well bottom. Two RTDs with different well structures are employed. The indium compositions of InGaAs quantum wells for these RTDs were 0.8 and 0.9, with the well thicknesses of 3.5 and 3.0 nm, respectively. The latter has a deep and thin well. The voltage at the current peak of the RTD without the deep well was 0.31 V, whereas an almost identical but slightly reduced peak voltage of 0.28 V was obtained by the deep well despite the decreased thickness. The oscillators were fabricated with the integration of 20-micrometers-long slot antennas to these RTDs. The highest oscillation frequencies were 1.27 and 0.96 THz for RTDs with and without the deep and thin well, respectively. The increase in oscillation frequency for the thin quantum well was attributed to a decrease in the intrinsic delay due to the thin well. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | terahertz oscillators / resonant tunneling diodes / dwell time in resonance region / integrated slot antennas / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 364, ED2012-104, pp. 63-67, Dec. 2012. | |
| Paper # | ED2012-104 | |
| Date of Issue | 2012-12-10 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2012-104 Link to ES Tech. Rep. Archives: ED2012-104 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2012-12-17 - 2012-12-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tohoku University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter wave / Terahertz devices and systems |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2012-12-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Frequency increase in terahertz oscillation of resonant tunneling diodes by thin and deep quantum wells |
| Sub Title (in English) | |
| Keyword(1) | terahertz oscillators |
| Keyword(2) | resonant tunneling diodes |
| Keyword(3) | dwell time in resonance region |
| Keyword(4) | integrated slot antennas |
| Keyword(5) | |
| Keyword(6) | |
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| 1st Author's Name | Hidetoshi Kanaya |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 2nd Author's Name | Riku Sogabe |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 3rd Author's Name | Safumi Suzuki |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 4th Author's Name | Masahiro Asada |
| 4th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
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| Speaker | Author-1 |
| Date Time | 2012-12-18 10:50:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2012-104 |
| Volume (vol) | vol.112 |
| Number (no) | no.364 |
| Page | pp.63-67 |
| #Pages | 5 |
| Date of Issue | 2012-12-10 (ED) |
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