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Paper Abstract and Keywords
Presentation 2012-12-18 12:05
Sub-Millimeter-Wave InP-Based Schottky-Barrier Diode Module for Zero-Biased Operation
Hiroshi Ito (Kitasato Univ.), Yoshifumi Muramoto (NTT), Hiroshi Yamamoto (Kitasato Univ.), Tadao Ishibashi (NEL) ED2012-107 Link to ES Tech. Rep. Archives: ED2012-107
Abstract (in Japanese) (See Japanese page) 
(in English) An InP/InGaAsP Schottky barrier diode (SBD) for zero-biased operation in the sub-millimeter-wave range has been developed. The SBD is monolithically integrated with a short-stub resonant matching circuit to increase the detection sensitivity around the designated frequency. The fabricated device exhibits a small Schottky barrier height of about 0.37 eV, which is suitable for zero-biased operation. The SBD chip is mounted in a compact J-band (WR-3) rectangular-waveguide-input module to evaluate the high-frequency characteristics. The module exhibits a peak sensitivity at around 350 GHz due to the characteristics of the matching circuit, and good linearity of the output voltage against the input sub-mm-wave power. A record sensitivity of 1460 V/W at 350 GHz is obtained for the InP-based zero-biased SBD.
Keyword (in Japanese) (See Japanese page) 
(in English) Schottky barrier diode / InP/InGaAsP / sub-millimeter-wave / zero-biased operation / module / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 364, ED2012-107, pp. 77-82, Dec. 2012.
Paper # ED2012-107 
Date of Issue 2012-12-10 (ED) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-107 Link to ES Tech. Rep. Archives: ED2012-107

Conference Information
Committee ED  
Conference Date 2012-12-17 - 2012-12-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter wave / Terahertz devices and systems 
Paper Information
Registration To ED 
Conference Code 2012-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Sub-Millimeter-Wave InP-Based Schottky-Barrier Diode Module for Zero-Biased Operation 
Sub Title (in English)  
Keyword(1) Schottky barrier diode  
Keyword(2) InP/InGaAsP  
Keyword(3) sub-millimeter-wave  
Keyword(4) zero-biased operation  
Keyword(5) module  
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1st Author's Name Hiroshi Ito  
1st Author's Affiliation Kitasato University (Kitasato Univ.)
2nd Author's Name Yoshifumi Muramoto  
2nd Author's Affiliation NTT Photonics Laboratories (NTT)
3rd Author's Name Hiroshi Yamamoto  
3rd Author's Affiliation Kitasato University (Kitasato Univ.)
4th Author's Name Tadao Ishibashi  
4th Author's Affiliation NTT Electronics Corporation (NEL)
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Speaker
Date Time 2012-12-18 12:05:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2012-107 
Volume (vol) IEICE-112 
Number (no) no.364 
Page pp.77-82 
#Pages IEICE-6 
Date of Issue IEICE-ED-2012-12-10 


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