Paper Abstract and Keywords |
Presentation |
2012-12-18 10:05
Operation temperature performance improvement by utilizing high Al composition AlGaAs in THz QCLs Tsung-Tse Lin, Hideki Hirayama (RIKEN) ED2012-103 Link to ES Tech. Rep. Archives: ED2012-103 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Terahertz quantum cascade lasers (THz QCLs) are unipolar intersubband transition semiconductor THz source with narrow linewidth and high output power. They have been earnest to operate near room temperature in order to realize compact size THz applications without cooling system. Current limited maximum operation temperature (Tmax) 199.5 K is reported by a state-of-the-art longitudinal optical (LO) phonon depopulation scheme GaAs/Al0.15Ga0.85As structure. Here we propose the operation temperature performance improvement by utilizing high Al composition AlGaAs in THz QCLs and succsefully increase the Tmax of a 4-well resonant tunneling (RT) LO phonon scheme THz QCLs about 10 K.
The deep well potential and increase total LO phonon energy will increase the design freedom and improve the thermal performances.
It have the advantage of (1) Reduce Jth at high temperature operation region and increase device characteristic temperature (T0).
Because higher LO phonon energy is expected to reduce the non-radiative leakage via LO-phonon scattering between two lasing levels.
(2) Reduce thermal backfilling from ground level.
Both are expected to reduce Jth at higher temperature.
The high Al composition AlGaAs structure is one of the suitable designs for approaching the high temperature operation THz QCLs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Terahertz / Quantum Cascade Laser / / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 364, ED2012-103, pp. 57-61, Dec. 2012. |
Paper # |
ED2012-103 |
Date of Issue |
2012-12-10 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2012-103 Link to ES Tech. Rep. Archives: ED2012-103 |
Conference Information |
Committee |
ED |
Conference Date |
2012-12-17 - 2012-12-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tohoku University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Millimeter wave / Terahertz devices and systems |
Paper Information |
Registration To |
ED |
Conference Code |
2012-12-ED |
Language |
English (Japanese title is available) |
Title (in Japanese) |
(See Japanese page) |
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(See Japanese page) |
Title (in English) |
Operation temperature performance improvement by utilizing high Al composition AlGaAs in THz QCLs |
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Terahertz |
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Quantum Cascade Laser |
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1st Author's Name |
Tsung-Tse Lin |
1st Author's Affiliation |
RIKEN (RIKEN) |
2nd Author's Name |
Hideki Hirayama |
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RIKEN (RIKEN) |
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Speaker |
Author-1 |
Date Time |
2012-12-18 10:05:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2012-103 |
Volume (vol) |
vol.112 |
Number (no) |
no.364 |
Page |
pp.57-61 |
#Pages |
5 |
Date of Issue |
2012-12-10 (ED) |