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Paper Abstract and Keywords
Presentation 2012-12-17 13:50
F-Band Bidirectional Amplifier Using 75-nm InP HEMTs
Shoichi Shiba, Masaru Sato, Toshihide Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi, Kozo Makiyama, Naoki Hara (Fujitsu) ED2012-95 Link to ES Tech. Rep. Archives: ED2012-95
Abstract (in Japanese) (See Japanese page) 
(in English) We have developed an F-band (90 to 140 GHz) bidirectional amplifier MMIC using a 75-nm InP HEMT technology for short-range millimeter-wave high-speed communication systems. Inherent symmetric common-gate transistors and parallel circuits consisting of an inductor and a switch realizes a bidirectional operation with a wide bandwidth of over 50 GHz. Small signal gains of 12-15 dB and 9-12 dB were achieved in forward and reverse directions, respectively. Fractional bandwidths of the developed bidirectional amplifier were 39% for the forward direction and 32% for the reverse direction, which were almost double as large as those of conventional bidirectional amplifiers. The power consumption of the bidirectional amplifier was 15 mW under a 2.4-V supply. The chip measures 0.70 × 0.65 mm. The simulated NF is lower than 5 dB, and the saturation power is larger than 5 dBm. The use of this bidirectional amplifier provides miniaturization of the multi-gigabit communication systems and eliminates signal switching loss.
Keyword (in Japanese) (See Japanese page) 
(in English) Bidirectional amplifier / InP HEMTs / Monolithic microwave integrated circuits (MMICs) / / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 364, ED2012-95, pp. 11-15, Dec. 2012.
Paper # ED2012-95 
Date of Issue 2012-12-10 (ED) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-95 Link to ES Tech. Rep. Archives: ED2012-95

Conference Information
Committee ED  
Conference Date 2012-12-17 - 2012-12-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter wave / Terahertz devices and systems 
Paper Information
Registration To ED 
Conference Code 2012-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) F-Band Bidirectional Amplifier Using 75-nm InP HEMTs 
Sub Title (in English)  
Keyword(1) Bidirectional amplifier  
Keyword(2) InP HEMTs  
Keyword(3) Monolithic microwave integrated circuits (MMICs)  
1st Author's Name Shoichi Shiba  
1st Author's Affiliation Fujitsu Limited (Fujitsu)
2nd Author's Name Masaru Sato  
2nd Author's Affiliation Fujitsu Limited (Fujitsu)
3rd Author's Name Toshihide Suzuki  
3rd Author's Affiliation Fujitsu Limited (Fujitsu)
4th Author's Name Yasuhiro Nakasha  
4th Author's Affiliation Fujitsu Limited (Fujitsu)
5th Author's Name Tsuyoshi Takahashi  
5th Author's Affiliation Fujitsu Limited (Fujitsu)
6th Author's Name Kozo Makiyama  
6th Author's Affiliation Fujitsu Limited (Fujitsu)
7th Author's Name Naoki Hara  
7th Author's Affiliation Fujitsu Limited (Fujitsu)
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Date Time 2012-12-17 13:50:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2012-95 
Volume (vol) IEICE-112 
Number (no) no.364 
Page pp.11-15 
#Pages IEICE-5 
Date of Issue IEICE-ED-2012-12-10 

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